TOSHIBA SSM6K201FE

SSM6K201FE
Tentative
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6K201FE
Power Management Switch Applications
Unit: mm
High Speed Switching Applications
•
1.8 V drive
•
Low ON-resistance:
Ron = 186 mΩ (max) (@VGS = 1.8V)
Ron = 119 mΩ (max) (@VGS = 2.5V)
Ron =
91 mΩ (max) (@VGS = 4.0V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain–source voltage
Rating
Unit
VDS
20
V
V
VGSS
± 12
DC
ID
2.3
Pulse
IDP
4.6
PD (Note 1)
500
Gate–source voltage
Drain current
Symbol
Drain power dissipation
1, 2, 5, 6 : Drain
3
: Gate
4
: Source
A
ES6
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Note 1: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2 )
JEDEC
―
JEITA
―
TOSHIBA
2-2N1A
Weight: 3 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain–source breakdown voltage
Symbol
Test Condition
Min
Typ.
Max
Unit
V (BR) DSS
ID = 1 mA, VGS = 0
20
⎯
⎯
V
V (BR) DSX
ID = 1 mA, VGS = –12 V
10
⎯
⎯
V
Drain cutoff current
IDSS
VDS = 20 V, VGS = 0
⎯
⎯
1
µA
Gate leakage current
IGSS
VGS = ± 12 V, VDS = 0
⎯
⎯
±1
µA
Vth
VDS = 3 V, ID = 1 mA
0.4
⎯
1.0
V
Forward transfer admittance
⏐Yfs⏐
VDS = 3 V, ID = 1.0 A
(Note2)
2.8
5.5
⎯
S
ID = 1.0 A, VGS = 4.0 V
(Note2)
⎯
71
91
Drain–source ON-resistance
RDS (ON)
ID = 0.5 A, VGS = 2.5 V
(Note2)
⎯
91
119
ID = 0.2 A, VGS = 1.8 V
(Note2)
⎯
121
186
Gate threshold voltage
mΩ
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
220
⎯
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
51
⎯
pF
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
42
⎯
pF
Switching time
Turn-on time
ton
VDD = 10 V, ID = 2.0 A,
⎯
12
⎯
Turn-off time
toff
VGS = 0 to 2.5 V, RG = 4.7 Ω
⎯
10
⎯
⎯
– 0.85
– 1.20
Drain–source forward voltage
VDSF
ID = − 2.3 A, VGS = 0 V
(Note2)
ns
V
Note2: Pulse test
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2006-04-25
SSM6K201FE
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
2.5 V
OUT
2.5 V
0V
RG
0
10 µs
Marking
10%
VDD
(c) VOUT
VDD
VDD = 10 V
RG = 4.7 Ω
< 1%
D.U. =
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
6
90%
IN
VDS (ON)
10%
90%
tr
ton
tf
toff
Equivalent Circuit (top view)
5
4
6
5
4
3
1
2
3
KC
1
2
Notice on Usage
Vth can be expressed as the voltage between gate and source when the low operating current value is ID = 1 mA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on).)
Take this into consideration when using the device. The VGS recommended voltage for turning on this product is 1.8 V
or higher.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
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SSM6K201FE
ID – VDS
5
10 V
4.0 V
ID – VGS
10
2.5 V
Common Source
VDS = 3 V
Drain current ID (A)
Drain current ID (A)
1.8 V
4
3
1.5 V
2
1
0.1
Ta = 85 °C
VGS = 1.2 V
1
25 °C
0.01
− 25 °C
0.001
Common Source
Ta = 25°C
0
0
0.4
0.2
0.6
0.8
0.0001
0
1
Drain–source voltage VDS (V)
1.0
Gate–source voltage VGS (V)
RDS (ON) – ID
RDS (ON) – VGS
200
ID = 1.0 A
Common Source
Common Source
Ta = 25°C
Drain–source ON-resistance
RDS (ON) (mΩ)
Drain–source ON-resistance
RDS (ON) (mΩ)
200
Ta = 25°C
150
100
50
0
0
2
6
4
8
150
1.8 V
100
2.5 V
VGS = 4.0 Ｖ
50
0
10
0
1
Gate–source voltage VGS (V)
RDS (ON) – Ta
4
5
Vth – Ta
1.0
Gate threshold voltage Vth (V)
Common Source
250
200
0.2 A / 1.8 V
150
0.5 A / 2.5 V
100
ID = 1.0 A / VGS = 4.0 V
50
0
−50
3
2
Drain current ID (A)
300
Drain–source on-resistance
RDS (ON) (mΩ)
2.0
0
50
Ambient temperature
100
Ta
0.5
Common source
VDS = 3 V
ID = 1 mA
0
−50
150
(°C)
0
50
Ambient temperature
3
100
Ta
150
(°C)
2006-04-25
SSM6K201FE
Common Source
Common Source
VDS = 5 V
Ta = 25°C
VGS = 0 V
Drain reverse current IDR
3
10
(A)
(S)
Forward transfer admittance ⎪Yfs⎪
IDR – VDS
|Yfs| – ID
10
1
0.3
0.1
0.01
1
0.1
Drain current ID
IDR
G
S
0.1
Ta =85 °C
25 °C
0.01
−25 °C
–0.2
(A)
–0.4
–0.6
–0.8
–1.0
Drain–source voltage VDS (V)
C – VDS
1000
Ta = 25°C
1
0.001
0
10
D
t – ID
1000
Common Source
VDD = 10 V
VGS = 0 to 2.5 V
(ns)
(pF)
500
300
100
50
Coss
Common Source
Ta = 25°C
30
tf
t
Switching time
Capacitance C
Ciss
Crss
10
ton
tr
f = 1 MHz
VGS = 0 V
10
0.1
1
10
1
0.01
100
Ta = 25°C
RG = 4.7 Ω
toff
100
0.1
Drain current ID
Drain–source voltage VDS (V)
1
10
(A)
PD – Ta
Drain Power Dissipation PD (mW)
1000
Mounted on an FR4 board
2
(25.4 x 25.4 x 1.6 mm P
Cu Pad
– T: 645 mm )
D
a
800
600
400
200
0
–40
–20
0
20
40
60
80
Ambient temperature
100 120 140
Ta
160
(°C)
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SSM6K201FE
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2006-04-25