Nov 2002 AO4604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications. n-channel VDS (V) = 30V ID = 6.9A RDS(ON) < 28mΩ (VGS=10V) < 42mΩ (VGS=4.5V) p-channel -30V -5A RDS(ON) < 52mΩ (VGS = 10V) < 87mΩ (VGS = 4.5V) D1 D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 S1 S2 SOIC-8 p-channel n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage Pulsed Drain Current TA=70°C B TA=25°C Power Dissipation ±20 6.9 -5 ID 5.8 -4.2 IDM 30 -20 2 2 TA=70°C 1.44 1.44 Junction and Storage Temperature Range -55 to 150 -55 to 150 PD TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch Typ 48 74 35 p-ch p-ch p-ch 48 74 35 Units V V ±20 TA=25°C Continuous Drain Current A Max p-channel -30 A W °C Max Units 62.5 °C/W 110 °C/W 40 °C/W 62.5 110 40 °C/W °C/W °C/W AO4604 Electrical Characteristics (TJ=25°C unless otherwise noted): N-CHANNEL Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=4.5V, VDS=5V 20 TJ=55°C 5 VGS=10V, ID=6.9A TJ=125°C VGS=4.5V, ID=5.0A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current IS VDS=5V, ID=6.9A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=6.9A 10 Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 30 VDS=24V, VGS=0V IDSS RDS(ON) Typ µA 100 nA 1.9 3 V 22.5 28 31.3 38 34.5 42 A 15.4 0.76 mΩ mΩ S 1 V 3 A 680 pF 102 pF 77 pF 3 Ω 13.84 nC 6.74 nC Qgs Gate Source Charge 1.82 nC Qgd Gate Drain Charge 3.2 nC tD(on) Turn-On DelayTime 4.6 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω 4.1 ns 20.6 ns 5.2 ns IF=6.9A, dI/dt=100A/µs 16.5 Body Diode Reverse Recovery Charge IF=6.9A, dI/dt=100A/µs 7.8 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. AO4604 Electrical Characteristics (TJ=25°C unless otherwise noted): P-CHANNEL Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Gate Threshold Voltage On state drain current VGS(th) ID(ON) Conditions Min ID=-250µA, VGS=0V VDS=-24V, VGS=0V -30 VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-10V, ID=5.0A Static Drain-Source On-Resistance gFS VSD IS VGS=-4.5V, ID=-4A Forward Transconductance VDS=-5V, ID=-5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Crss Rg Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg (10V) Total Gate Charge (10V) Qg (4.5V) Total Gate Charge (4.5V) Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Units V µA -1.8 ±100 -3 nA V 39 54 67 52 70 87 -10 TJ=125°C 6 A 8.6 -0.77 mΩ mΩ -1 S V -2.8 A 700 pF VGS=0V, VDS=-15V, f=1MHz 120 75 pF pF VGS=0V, VDS=0V, f=1MHz 10 Ω 14.7 nC VGS=-10V, VDS=-15V, ID=-5A 7.6 2 nC nC VGS=-10V, VDS=-15V, RL=3Ω, RGEN=3Ω 3.8 8.3 5 29 14 23.5 nC ns ns ns ns Turn-Off Fall Time IF=-5A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs Body Diode Reverse Recovery Time -1 Max -1 -5 TJ=55°C RDS(ON) DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Typ 13.4 A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. ns nC AO4604 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 25 20 6V 5V 4.5V VDS=5V 16 4V 15 ID(A) ID (A) 20 3.5V 12 8 10 VGS=3V 5 125°C 4 25°C 0 0 0 1 2 3 4 0 5 0.5 Normalized On-Resistance 50 RDS(ON) (mΩ) 1.5 2 2.5 3 3.5 4 4.5 1.6 60 VGS=4.5V 40 30 20 VGS=10V 10 0 5 10 15 1.5 VGS=10V ID=5A 1.4 VGS=4.5V 1.3 1.2 1.1 1 0.9 0.8 20 0 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 50 100 150 200 Temperature ( °C) Figure 4: On-Resistance vs. Junction Temperature 70 1.0E+01 60 1.0E+00 ID=5A 50 IS Amps RDS(ON) (mΩ) 1 VGS (Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 125°C 40 1.0E-01 1.0E-02 125°C 1.0E-03 30 25°C 1.0E-04 25°C 20 1.0E-05 0.0 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body diode characteristics 1.0 AO4604 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 VDS=15V ID=6.9A 800 Capacitance (pF) VGS (Volts) 8 f=1MHz VGS=0V 900 6 4 2 700 Ciss 600 500 400 300 200 Coss 100 0 Crss 0 0 2 4 6 8 10 12 14 0 Qg (nC) Figure 7: Gate-Charge characteristics 100 25 30 TJ(Max)=150°C TA=25°C 10µs Power W ID (Amps) 20 40 10ms 0.1s 1 15 30 100µs 1ms 10 10 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C TA=25°C RDS(ON) limited 5 1s 20 10 10s DC 0.1 0.1 1 10 0 0.001 100 VDS (Volts) Z θJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4604 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 20 -10V -5V -6V -4.5V -4V 6 10 -ID(A) -ID (A) VDS=-5V 8 15 -3.5V 4 125°C VGS=-3V 5 2 25°C -2.5V 0 0.00 0 1.00 2.00 3.00 4.00 5.00 0 1 -VDS (Volts) Figure 1: On-Region Characteristics 100 Normalized On-Resistance RDS(ON) (mΩ) 3 4 1.60E+00 80 VGS=-4.5V 60 VGS=-10V 40 20 VGS=-4.5V 1.40E+00 VGS=-10V 1.20E+00 1.00E+00 ID=-5A 8.00E-01 1 3 5 7 9 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 160 140 1E+00 ID=-5A 120 1E-01 100 1E-02 -IS (A) RDS(ON) (mΩ) 2 -VGS(Volts) Figure 2: Transfer Characteristics 125°C 80 125°C 1E-03 25°C 1E-04 60 25°C 40 1E-05 1E-06 20 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha and Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO4604 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=-15V ID=-5A 1000 Capacitance (pF) -VGS (Volts) 8 6 4 2 Ciss 800 600 400 Coss 200 0 Crss 0 0 2 4 6 8 10 12 14 16 0 -Qg (nC) Figure 7: Gate-Charge Characteristics TJ(Max)=150°C TA=25°C 15 20 25 30 40 TJ(Max)=150°C TA=25°C 10µs RDS(ON) limited 10 10 -VDS (Volts) Figure 8: Capacitance Characteristics 30 100µs Power (W) -ID (Amps) 100 5 1ms 0.1s 10ms 1 20 10 1s 10s DC 0 0.001 0.1 0.1 1 10 100 ZθJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 ALPHA & OMEGA SO-8 Package Data SEMICONDUCTOR, INC. DIMENSIONS IN MILLIMETERS SYMBOLS A A1 A2 b c D E1 e E h L aaa θ MIN 1.45 0.00 −−− 0.33 0.19 4.80 3.80 5.80 0.25 0.40 −−− 0° NOM 1.50 −−− 1.45 −−− −−− −−− −−− 1.27 BSC −−− −−− −−− −−− −−− DIMENSIONS IN INCHES MAX 1.55 0.10 −−− 0.51 0.25 5.00 4.00 MIN 0.057 0.000 −−− 0.013 0.007 0.189 0.150 6.20 0.50 1.27 0.10 8° 0.228 0.010 0.016 −−− 0° NOM 0.059 −−− 0.057 −−− −−− −−− −−− 0.050 BSC −−− −−− −−− −−− −−− MAX 0.061 0.004 −−− 0.020 0.010 0.197 0.157 0.244 0.020 0.050 0.004 8° θ NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE ±0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE PACKAGE MARKING DESCRIPTION LOGO 4 6 0 4 FAYWLC NOTE: LOGO 4604 F A Y W LC RECOMMENDED LAND PATTERN - AOS LOGO - PART NUMBER CODE. - FAB LOCATION - ASSEMBLY LOCATION - YEAR CODE - WEEK CODE. - ASSEMBLY LOT CODE SOP-8 PART NO. CODE PART NO. CODE AO4604 4604 UNIT: mm Rev. A ALPHA & OMEGA SEMICONDUCTOR, INC. SO-8 Carrier Tape SO-8 Reel SO-8 Tape Leader / Trailer & Orientation SO-8 Tape and Reel Data