DIODES ZXMC6A09DN8TA

ZXMC6A09DN8
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET
SUMMARY
N-Channel V(BR)DSS = 60V; RDS(ON) = 0.045 ; ID= 5.1A
P-Channel V(BR)DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A
DESCRIPTION
This new generation of trench MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
SO8
FEATURES
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
APPLICATIONS
• Motor drive
• LCD backlighting
Q1 = N-CHANNEL
Q2 = P-CHANNEL
ORDERING INFORMATION
DEVICE
REEL
TAPE
WIDTH
QUANTITY
PER REEL
ZXMC6A09DN8TA
7’‘
12mm
500 units
ZXMC6A09DN8TC
13’‘
12mm
2500 units
PINOUT
DEVICE MARKING
ZXMC
6A09
Top view
ISSUE 4 - MAY 2005
1
ZXMC6A09DN8
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain [email protected] GS =10V;
@V GS =10V;
@V GS =10V;
T A =25⬚C (b)(d)
T A =25⬚C (b)(d)
T A =25⬚C (a)(d)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
(b)
(c)
N-Channe
l
P-Channel
UNIT
V DSS
60
-60
V
V GS
⫾20
⫾20
V
ID
5.1
4.1
3.9
-4.8
-3.8
-3.7
A
A
I DM
25
-23
A
IS
3.5
-3.3
A
I SM
25.4
-23.8
A
(a)(d)
PD
1.25
10
W
mW/°C
Power Dissipation at T A =25°C (a)(e)
Linear Derating Factor
PD
1.8
14
W
mW/°C
Power Dissipation at T A =25°C (b)(d)
Linear Derating Factor
PD
2.1
17
W
mW/°C
Operating and Storage Temperature Range
T j :T stg
-55 to +150
°C
VALUE
UNIT
Power Dissipation at T A =25°C
Linear Derating Factor
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction to Ambient
(a)(d)
R θJA
100
°C/W
Junction to Ambient
(b)(e)
R θJA
69
°C/W
Junction to Ambient
(b)(d)
R θJA
58
°C/W
Notes:
(a) For a dual device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width=300µs - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
ISSUE 4 - MAY 2005
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ZXMC6A09DN8
CHARACTERISTICS
ISSUE 4 - MAY 2005
3
ZXMC6A09DN8
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
Drain-Source Breakdown Voltage
V (BR)DSS
60
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
TYP.
MAX.
UNIT
CONDITIONS
STATIC
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
V GS(th)
(1)
Forward Transconductance (1)(3)
V
I D =250µA, V GS =0V
1.0
␮A
V DS =60V, V GS =0V
100
nA
V GS =⫾20V, V DS =0V
V
I =250␮A, V DS = V GS
D
⍀
⍀
V GS =10V, I D =8.2A
V GS =4.5V, I D =7.4A
V DS =15V,I D =8.2A
1.0
R DS(on)
0.045
0.070
g fs
15
S
Input Capacitance
C iss
1407
pF
Output Capacitance
C oss
121
pF
Reverse Transfer Capacitance
C rss
59
pF
Turn-On Delay Time
t d(on)
4.9
ns
Rise Time
tr
3.3
ns
Turn-Off Delay Time
t d(off)
28.5
ns
Fall Time
tf
11.0
ns
Gate Charge
Qg
12.4
nC
Total Gate Charge
Qg
24.2
nC
Gate-Source Charge
Q gs
5.2
nC
Gate-Drain Charge
Q gd
3.5
nC
V SD
0.85
t rr
Q rr
DYNAMIC (3)
SWITCHING
V DS =40V, V GS =0V,
f=1MHz
(2) (3)
V DD =30V, I D =1.0A
R G 6.0Ω, V GS =10V
V DS =15V,V GS =5V,
I D =3.5A
V DS =15V,V GS =10V,
I D =3.5A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge
(3)
0.95
V
T J =25°C, I S =6.6A,
V GS =0V
26.3
ns
T J =25°C, I F =3.5A,
di/dt= 100A/␮s
26.6
nC
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 4 - MAY 2005
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ZXMC6A09DN8
P-CHANNEL
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
Drain-Source Breakdown Voltage
V (BR)DSS
-60
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
TYP.
MAX.
UNIT
CONDITIONS
STATIC
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
V GS(th)
(1)
Forward Transconductance (1)(3)
V
I D =-250µA, V GS =0V
-1.0
␮A
V DS =-60V, V GS =0V
100
nA
V GS =⫾20V, V DS =0V
V
I =-250␮A, V DS = V GS
D
⍀
⍀
V GS =-10V, I D =-3.5A
V GS =-4.5V, I D =-2.9A
V DS =-15V,I D =-3.5A
-1.0
R DS(on)
0.055
0.080
g fs
8.7
S
Input Capacitance
C iss
1580
pF
Output Capacitance
C oss
160
pF
Reverse Transfer Capacitance
C rss
140
pF
Turn-On Delay Time
t d(on)
4.6
ns
Rise Time
tr
5.8
ns
Turn-Off Delay Time
t d(off)
55
ns
Fall Time
tf
23
ns
Gate Charge
Qg
23
nC
Total Gate Charge
Qg
44
nC
Gate-Source Charge
Q gs
3.9
nC
Gate-Drain Charge
Q gd
9.8
nC
V SD
-0.85
DYNAMIC (3)
SWITCHING
V DS =-30 V, V GS =0V,
f=1MHz
(2) (3)
V DD =-30V, I D =-1A
R G 6.0Ω, V GS =-10V
V DS =-30V,V GS =-5V,
I D =-3.5A
V DS =-30V,V GS =-10V,
I D =-3.5A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge
(3)
-0.95
V
T J =25°C, I S =-4.2A,
V GS =0V
T J =25°C, I F =-2.1A,
di/dt= 100A/µs
t rr
37
ns
Q rr
56
nC
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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ZXMC6A09DN8
N-CHANNEL TYPICAL CHARACTERISTICS
ISSUE 4 - MAY 2005
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ZXMC6A09DN8
1800
1600
1400
1200
1000
800
600
400
200
0
VGS = 0V
f = 1MHz
VGS Gate-Source Voltage (V)
C Capacitance (pF)
N-CHANNEL TYPICAL CHARACTERISTICS
CISS
COSS
CRSS
1
10
VDS - Drain - Source Voltage (V)
Capacitance v Drain-Source Voltage
10
ID = 3.5A
8
6
VDS = 15V
4
2
0
0
5
10
15
Q - Charge (nC)
20
25
Gate-Source Voltage v Gate Charge
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ZXMC6A09DN8
P-CHANNEL TYPICAL CHARACTERISTICS
ISSUE 4 - MAY 2005
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ZXMC6A09DN8
P-CHANNEL TYPICAL CHARACTERISTICS
ISSUE 4 - MAY 2005
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ZXMC6A09DN8
PACKAGE OUTLINE
CONTROLLING DIMENSIONS ARE IN INCHES
APPROX IN MILLIMETERS
PACKAGE DIMENSIONS
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min
Max
Min
Max
Min
Max
A
1.35
1.75
0.053
0.069
e
A1
0.10
0.25
0.004
0.010
b
0.33
0.51
0.013
0.020
D
4.80
5.00
0.189
0.197
c
0.19
0.25
0.008
0.010
H
5.80
6.20
0.228
0.244
⍜
0°
8°
0°
8°
E
3.80
4.00
0.150
0.157
h
0.25
0.50
0.010
0.020
L
0.40
1.27
0.016
0.050
-
-
-
-
-
1.27 BSC
Min
Max
0.050 BSC
© Zetex Semiconductors plc 2005
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ISSUE 4 - MAY 2005
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