FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm (Typ.)@12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION The FSX017LG is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic range and are suitable for use in medium power, wide band, linear drive amplifiers. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Symbol Storage Temperature VDS VGS Ptot Tstg Channel Temperature Tch Condition Rating Unit Note 8 -5 220 V V mW -65 to +175 °C 175 °C Limit Typ. Max. Unit Note: Mounted on Al2O3 board (30 x 30 x 0.65mm) For reliable operation of this FET: 1. The drain - source operating voltage (VDS) should not exceed 4 volts. 2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with gate resistance of 2000Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Symbol IDSS Test Conditions VDS = 3V, VGS = 0V Min. 35 55 75 mA Transconductance gm VDS = 3V, IDS = 27mA - 50 - mS Pinch-off Voltage Vp VDS = 3V, IDS = 2.7mA -0.7 -1.2 -1.7 V -5 - - V 15.0 16.0 - dBm 7.0 8.0 - dB - 300 400 °C/W Gate Source Breakdown Voltage VGSO Output Power at 1dB G.C.P. P1dB Power Gain at 1dB G.C.P. G1dB Thermal Resistance Rth IGS = -2.7µA VDS = 4V IDS = 30mA f = 12GHz Channel to Case CASE STYLE: LG G.C.P.: Gain Compression Point Note: The RF parameters are measured on a lot basis by sample testing at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested. Edition 1.2 July 1999 1 FSX017LG General Purpose GaAs FET DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 60 Drain Current (mA) 250 200 150 100 50 VGS = 0V 50 -0.2V 40 -0.4V 30 -0.6V 20 -0.8V 10 -1.0V -1.2V 50 100 150 1 200 Ambient Temperature (°C) 2 3 4 5 OUTPUT POWER vs. INPUT POWER 17 16 15 14 13 VDS=4V IDS = 30mA f = 12GHz Pout 12 11 10 9 30 20 10 ηadd 0 1 2 6 Drain-Source Voltage (V) 3 4 5 6 2 7 8 9 10 11 ηadd (%) 0 Output Power (dBm) Total Power Dissipation (mW) POWER DERATING CURVE FSX017LG General Purpose GaAs FET S11 S22 +j100 +j25 2 12 16 10 14 18 20 +j250 16 +j10 0.2 4 0.1 6 0.5 GHz 12 0 25 50Ω 18 250 100 180° 0.5 GHz 6 20 10 -j10 6 4 2 4 20 3 8 0.5 GHz SCALE FOR |S21| 0° 8 18 12 20 0.5 GHz 10 16 -j250 2 8 S21 S12 +90° SCALE FOR |S12| +j50 18 4 16 4 -j25 2 -j100 -90° -j50 S11 S-PARAMETERS VDS = 4V, IDS = 30mA S21 S12 MAG ANG MAG ANG FREQUENCY (MHZ) MAG ANG S22 500 .992 -15.5 4.814 165.8 .012 78.8 .735 -9.5 2000 .915 -58.9 4.244 127.5 .039 51.8 .709 -35.8 4000 .795 -104.8 3.300 86.9 .053 24.1 .670 -60.0 6000 .690 -144.0 2.839 54.1 .054 6.4 .632 -74.7 8000 .606 167.3 2.542 18.1 .052 -13.4 .533 -95.2 10000 .628 130.0 2.237 -16.3 .052 -16.5 .484 -133.0 12000 .655 98.8 1.924 -51.0 .067 -33.2 .544 -173.9 14000 .658 70.8 1.633 -82.5 .075 -51.9 .594 158.0 16000 .630 44.8 1.466 -113.5 .085 -75.4 .650 134.1 18000 .570 14.0 1.394 -147.7 .096 -107.7 .648 109.1 20000 .513 -18.3 1.296 172.6 .112 -151.6 .619 68.1 MAG ANG Download S-Parameters, click here 3 FSX017LG General Purpose GaAs FET Case Style "LG" Metal-Ceramic Hermetic Package 4.78±0.5 1.78±0.15 1.5±0.3 (0.07) (0.059) 1.5±0.3 (0.059) 1.0 (0.039) 1.5±0.3 (0.059) 1 4.78±0.5 3 1.78±0.15 1.5±0.3 (0.07) (0.059) 2 4 0.5 (0.02) 1.3 Max (0.051) 1. 2. 3. 4. Gate Source Drain Source 0.1 (0.004) Unit: mm(inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4