2N2218-2N2219 2N2221-2N2222 HIGH-SPEED SWITCHES DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltages. 2N2218/2N2219 approved to CECC 50002100, 2N2221/2N2222 approved to CECC 50002-101 available on request. TO-39 TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-base Voltage (I E = 0) 60 V V CEO Collector-emitter Voltage (I B = 0) 30 V V EBO Emitter-base Voltage (I C = 0) 5 V 0.8 A 2 N22 19 2 N22 22 0.8 0.5 W W 2 N22 19 2 N22 22 3 1.8 W W IC Pt o t Collector Current Total Power Dissipation at T amb ≤ 25 °C for 2N2 21 8 and for 2N2 22 1 and at T c as e ≤ 25 °C for 2N2 21 8 and for 2N2 22 1 and T st g Storage Temperature – 65 to 200 °C Tj Junction Temperature 175 °C January 1989 1/5 2N2218-2N2219-2N2221-2N2222 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 2 N22 18 2 N22 19 2N 222 1 2N 222 2 50 °C/W 187.5 °C/W 83.3 °C/W 300 °C/W ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit 10 10 nA µA 10 nA I CBO Collector Cutoff Current (I E = 0) V CB = 50 V V CB = 50 V I E BO Emitter Cutoff Current (I C = 0) VE B = 3 V Colllector-base Breakdown Voltage (I E = 0) I C = 10 µA 60 V V (BR)CE O * Collector-emitter Breakdown Voltage (I B = 0) I C = 10 mA 30 V V ( BR) Emittter-base Breakdown Voltage (I C = 0) I E = 10 µA 5 V V ( BR) CBO EBO T am b = 150 °C V CE (s at )* Collector-emitter Saturation Voltage I C = 150 mA I C = 500 mA I B = 15 mA I B = 50 mA 0.4 1.6 V V VB E (s at )* Base-emitter Saturation Voltage I C = 150 mA I C = 500 mA I B = 15 mA I B = 50 mA 1.3 2.6 V V DC Current Gain for 2N 221 8 and 2N 22 21 I C = 0.1 mA V CE = 10 V I C = 1 mA V CE = 10 V I C = 10 mA V CE = 10 V I C = 150 mA V CE = 10 V I C = 500 mA V CE = 10 V I C = 150 mA V CE = 1 V for 2N 221 9 and 2N 22 22 I C = 0.1 mA V CE = 10 V I C = 1 mA V CE = 10 V I C = 10 mA V CE = 10 V I C = 150 mA V CE = 10 V I C = 500 mA V CE = 10 V I C = 150 mA V CE = 1 V h F E* fT 20 25 35 40 20 20 35 50 75 100 30 50 120 300 Transition Frequency I C = 20 mA f = 100 MHz V CE = 20 V C CBO Collector-base Capacitance IE = 0 f = 100 kHz V CB = 10 V 8 pF R e (h ie ) Real Part of Input Impedance I C = 20 mA f = 300 MHz V CE = 20 V 60 Ω * Pulsed : pulse duration = 300 µs, duty cycle = 1 %. 2/5 250 MHz 2N2218-2N2219-2N2221-2N2222 TO-18 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. TYP. 12.7 MAX. 0.500 B 0.49 0.019 D 5.3 0.208 E 4.9 0.193 F 5.8 0.228 G 2.54 0.100 H 1.2 0.047 I 1.16 0.045 L 45o 45o D A G I E F H B L C 0016043 3/5 2N2218-2N2219-2N2221-2N2222 TO39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 TYP. MAX. 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 45o (typ.) L D A G I E F H B L P008B 4/5 2N2218-2N2219-2N2221-2N2222 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5