BCY58 BCY59 LOW NOISE AUDIO AMPLIFIERS DESCRIPTION The BCY58 and BCY59 are silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are intended for use in audio input stages, driver stages and low-noise input stages. The complementary PNP types are respectively the BCY78 and BCY79. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Value Symbol Parameter BCY58 BCY59 Unit V CES Collector-emitter Voltage (V BE = 0) 32 45 V V CEO Collector-emitter Voltage (I B = 0) 32 45 V V EBO Emitter-base Voltage (I C = 0) IC Collector Current IB Base Current Pt o t T s t g, T j January 1989 Total Power Dissipation at T amb ≤ 25 °C at T c as e ≤ 45 °C Storage and Junction Temperature 7 V 200 mA 50 mA 0.39 1 mW W – 65 to 200 °C 1/6 BCY58-BCY59 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max °C/W °C/W 150 450 ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified) Symbol I CE S I CE X I E BO Parameter Collector Cutoff Current (V BE = 0) Collector Cutoff Current (V BE = – 0.2 V) Test Conditions For BCY58 V CE = 32 V V CE = 32 V For BCY59 V CE = 45 V V CE = 45 V For BCY58 V CE = 32 V For BCY59 V CE = 45 V Max. Unit T amb = 150 °C 0.1 0.1 10 10 nA µA T amb = 150 °C 0.1 0.1 10 10 nA µA T amb = 100 °C 20 µA T amb = 100 °C 20 µA 10 nA V EB = 5 V Collector-emitter Breakdown Voltage (I B = 0) I C = 2 mA (BR)EBO * Emitter-base Breakdown Voltage (I C = 0) I E = 10 µA V CE( sat )* Collector-Emitter Saturation Voltage I C = 10 mA I C = 100 mA I B = 0.25 mA I B = 2.5 mA Base-emitter Voltage I C = 2 mA I C = 100 mA V CE = 5 V V CE = 1 V Base-emitter Saturation Voltage I C = 10 mA I C = 100 mA I B = 0.25 mA I B = 2.5 mA DC Current Gain I C =10 µA V CE = 5 V Gr.VII Gr.VIII Gr.IX Gr.X V CE = 5 V Gr.VII Gr.VIII Gr.IX Gr.X V CE = 1 V Gr.VII Gr.VIII Gr.IX Gr.X V CE =1 V Gr.VII Gr.VIII Gr.IX Gr.X V (BR)CE O * V BE V B E ( s at)* h F E* I C = 2 mA I C =10 mA I C =100 mA * Typ. Emitter cutoff Current (I C = 0) Pulsed : pulse duration = 300 µs, duty cycle = 1 %. 2/6 For BCY58 For BCY59 Min. 32 45 V V 7 V 0.12 0.4 0.35 0.7 V V 0.55 0.65 0.75 0.7 V V 0.6 0.75 0.7 0.9 0.85 1.2 V V 195 100 140 195 280 350 170 250 350 500 365 175 260 365 520 630 220 310 460 630 20 40 100 120 120 180 250 380 80 80 120 160 240 40 40 45 60 60 BCY58-BCY59 ELECTRICAL CHARACTERISTICS (continued) Symbol hfe Parameter Small Signal Current Gain Test Conditions I C = 2 mA f = 1 kHz I C =10 mA f = 100 MHz V CE = 5 V IC = 0 f = 1 MHz V E B = 0.5 V Collector-base Capacitance IE = 0 f = 1 MHz V CB = 10 V NF Noise Figure I C = 0.2 mA R g = 2 kΩ V CE = 5 V f = 1 kHz to n Turn-on Time I C = 10 mA I B1 = 1 mA I C = 100 mA I B1 = 10 mA V CC = 10 V C EBO C CBO t off * Transition Frequency Emitter-base Capacitance Turn-off Time Typ. Max. Unit V CE = 5 V Gr.VII Gr.VIII Gr.IX Gr.X fT Min. 125 125 175 250 350 250 350 500 700 200 MHz 11 15 pF 3.5 6 pF 2 6 dB 85 150 ns 55 150 ns 480 800 ns 480 800 ns V CC = 10 V I C = 10 mA V CC = 10 V I B1 = – I B2 = 1 mA I C = 100 mA V CC = 10 V I B1 = – I B2 = 10 mA Pulsed : pulse duration = 300 µs, duty cycle = 1 %. DC Current Gain. Collector-emitter Saturation Voltage. 3/6 BCY58-BCY59 Transition Frequency. Collector-base Capacitance. Noise Figure (f = 100 Hz). Noise Figure (f = 1 kHz). Noise Figure (f = 10 kHz). Noise Figure vs. Frequency. 4/6 BCY58-BCY59 TO-18 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. TYP. 12.7 MAX. 0.500 B 0.49 0.019 D 5.3 0.208 E 4.9 0.193 F 5.8 0.228 G 2.54 0.100 H 1.2 0.047 I 1.16 0.045 L 45o 45o D A G I E F H B L C 0016043 5/6 BCY58-BCY59 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 6/6