STP11NM80 - STF11NM80 STB11NM80 - STW11NM80 N-CHANNEL 800V - 0.35 Ω - 11 A TO-220 /FP/D2PAK/TO-247 MDmesh™ MOSFET Table 1: General Features TYPE STP11NM80 STF11NM80 STB11NM80 STW11NM80 ■ ■ ■ ■ Figure 1: Package VDSS RDS(on) 800 800 800 800 < < < < V V V V 0.40 0.40 0.40 0.40 Ω Ω Ω Ω RDS(on)*Qg ID 14 Ω∗nC 14 Ω∗nC 14 Ω∗nC 14 Ω∗nC 11 A 11 A 11 A 11 A TYPICAL R DS(on) = 0.35 Ω LOW GATE INPUT RESISTANCE LOW INPUT CAPACITANCE AND GATE CHARGE BEST RDS(on)*Qg IN THE INDUSTRY 3 1 3 2 TO-220 1 2 TO-220FP 3 1 3 2 1 DESCRIPTION The MDmesh™ associates the Multiple Drain process with the Company’s PowerMesh™ horizontal layout assuring an oustanding low on-resistance. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. D2PAK TO-247 Figure 2: Internal Schematic Diagram APPLICATIONS The 800 V MDmesh™ family is very suitable for single switch applications in particular for Flyback and Forward converter topologies and for ignition circuits in the field of lighting. Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING STP11NM80 P11NM80 TO-220 TUBE STF11NM80 F11NM80 TO-220FP TUBE STB11NM80T4 B11NM80 D2PAK TAPE & REEL STW11NM80 W11NM80 TO-247 TUBE Rev. 2 October 2005 1/14 STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 Table 3: Absolute Maximum ratings Symbol Parameter Value TO-220/D2PAK TO-247 VDS VDGR VGS Unit TO-220FP Drain-source Voltage (VGS = 0) 800 V Drain-gate Voltage (RGS = 20 kΩ) 800 V Gate- source Voltage ± 30 V ID Drain Current (continuous) at TC = 25°C 11 11 (*) A ID Drain Current (continuous) at TC = 100°C 4.7 4.7 (*) A IDM ( ) Drain Current (pulsed) 44 44 (*) A PTOT Total Dissipation at TC = 25°C 150 35 W Derating Factor 1.2 0.28 W /°C Tj Tstg Operating Junction Temperature Storage Temperature -65 to 150 °C ( ) Pulse width limited by safe operating area (*) Limited only by the Maximum Temperature Allowed Table 4: Thermal Data TO-220/D2PAK TO-247 TO-220FP Unit 0.83 3.6 °C/W Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Max Value Unit Table 5: Avalanche Characteristics Symbol 2/14 Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 2.5 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = 2.5A, VDD = 50 V) 400 mJ STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On/Off Symbol V(BR)DSS Parameter Test Conditions Min. Typ. Max. 800 Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 10 100 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 30V 100 nA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 4 5 V RDS(on) Static Drain-source On Resistance VGS = 10V, ID =5.5 A 0.35 0.40 Ω Typ. Max. Unit 3 V Table 7: Dynamic Symbol gfs (1) Parameter Test Conditions Forward Transconductance VDS > ID(on) x RDS(on)max, ID = 7.5 A Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 Gate Input Resistance td(on) tr td(off) tf Qg Qgs Qgd Ciss Coss Crss RG Min. 8 S 1630 750 30 pF pF pF f=1 MHz Gate DC Bias = 0 Test Signal Level = 20mV Open Drain 2.7 Ω Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VDD = 400 V, ID = 5.5 A RG = 4.7Ω VGS = 10 V (Resistive Load see, Figure 4) 22 17 46 15 ns ns ns ns Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 640 V, ID = 11 A, VGS = 10V 43.6 11.6 21 nC nC nC Table 8: Source Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Unit 11 44 A A 0.86 V ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 11 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 11 A, di/dt = 100 A/µs VDD = 50 V, Tj = 25°C (see test circuit, Figure 5) 612 7.22 23.6 ns µC A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 11 A, di/dt = 100 A/µs VDD = 50 V, Tj = 150°C (see test circuit, Figure 5) 970 11.25 23.2 ns µC A trr Qrr IRRM trr Qrr IRRM Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3/14 STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 Figure 3: Safe Operating Area For D2PAK/ TO-247 / TO-220 Figure 6: Safe Operating Area For TO-220FP Figure 4: Thermal Impedance For D2PAK/ TO-247 / TO-220 Figure 7: Thermal Impedance For TO-220FP Figure 5: Output Characteristics Figure 8: Output Characteristics 4/14 STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 Figure 9: Transfer Characteristics Figure 12: Normalized Gate Threshold Voltage vs Temperature Figure 10: Transconductance Figure 13: Static Drain-Source On Resistance Figure 11: Gate Charge vs Gate-source Voltage Figure 14: Capacitance Variations 5/14 STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 Figure 15: Normalized On Resistance vs Temperature Figure 16: Source-Drain Forward Characteristics 6/14 Figure 17: Normalized BVDSS vs Temperature STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 Figure 18: Unclamped Inductive Load Test Circuit Figure 21: Unclamped Inductive Wafeform Figure 19: Switching Times Test Circuit For Resistive Load Figure 22: Gate Charge Test Circuit Figure 20: Test Circuit For Inductive Load Switching and Diode Recovery Times 7/14 STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 TO-220 MECHANICAL DATA DIM. mm. MIN. inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 8/14 TYP 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 TO-220FP MECHANICAL DATA mm. DIM. MIN. A 4.4 inch TYP MAX. MIN. TYP. 4.6 0.173 0.181 MAX. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 L3 28.6 30.6 1.126 1.204 L4 9.8 10.6 .0385 0.417 L5 2.9 3.6 0.114 0.141 L6 15.9 16.4 0.626 0.645 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L7 L3 L6 F2 H G G1 F F1 L7 L2 L5 1 2 3 L4 9/14 STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 TO-263 (D 2PAK) MECHANICAL DATA mm. inch DIM. MIN. A MAX. MIN. 4.57 0.178 TYP. 0.180 MAX. A1 0.00 0.25 0.00 0.009 b 0.71 0.91 0.028 0.350 b2 1.15 1.40 0.045 0.055 c 0.46 0.61 0.018 0.024 c2 1.22 1.40 0.048 0.055 D 8.89 9.40 0.350 D1 8.01 E 10.04 e 10/14 TYP 4.32 9.02 0.355 0.370 0.315 10.28 0.395 2.54 0.404 0.010 H 13.10 13.70 0.515 0.540 L 1.30 1.70 0.051 0.067 L1 1.15 1.39 0.045 0.054 L2 1.27 1.77 0.050 0.069 L4 2.70 3.10 0.106 0.122 V2 0° 8° 0° 8° STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 TO-247 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 0.620 0.214 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 5.50 0.216 11/14 STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 MAX. K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 12/14 inch 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 Figure 23: Revision History Date Revision 29-Jul-2004 20-Oct-2005 1 2 Description of Changes Final Document Modified value on Figure 17 13/14 STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14