STMICROELECTRONICS STD5N20L

STD5N20L
N-CHANNEL 200V - 0.65Ω - 5A DPAK
STripFET™ MOSFET
Figure 1: Package
Table 1: General Features
TYPE
VDSS
RDS(on)
ID
Pw
STD5N20L
200 V
< 0.7 Ω
5A
33 W
■
■
■
■
TYPICAL RDS(on) = 0.65 Ω @ 5V
CONDUCTION LOSSES REDUCED
LOW INPUT CAPACIATNCE
LOW THRESHOLD DEVICE
3
1
DESCRIPTION
The STD5N20L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC
Motor Control and lighting application.
DPAK
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ UPS AND MOTOR CONTROL
■ LIGHTING
Table 2: Order Codes
SALES TYPE
MARKING
PACKAGE
PACKAGING
STD5N20LT4
D5N20L
DPAK
TAPE & REEL
Rev. 3
September 2004
NEW DATASHEET ACCORDING TO PCN DSG-TRA/04/532
1/10
STD5N20L
Table 3: Absolute Maximum ratings
Symbol
VDS
VDGR
VGS
Parameter
Value
Unit
Drain-source Voltage (VGS = 0)
200
V
Drain-gate Voltage (RGS = 20 kΩ)
200
V
Gate- source Voltage
±20
V
ID
Drain Current (continuous) at TC = 25°C
5
A
ID
Drain Current (continuous) at TC = 100°C
3.6
A
IDM ()
Drain Current (pulsed)
20
A
PTOT
Total Dissipation at TC = 25°C
Derating Factor
Tstg
Tj
Storage Temperature
Operating Junction Temperature
33
W
0.27
W/°C
–55 to 150
°C
() Pulse width limited by safe operating area
Table 4: Thermal Data
Rthj-case
Thermal Resistance Junction-case Max
3.75
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
°C/W
Maximum Lead Temperature For Soldering Purpose
275
°C
Tl
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Symbol
V(BR)DSS
2/10
Parameter
Drain-source
Breakdown Voltage
Test Conditions
ID = 250 µA, VGS = 0
IDSS
VDS = Max Rating
Zero Gate Voltage
Drain Current (VGS = 0)
VDS= Max Rating, TC= 125°C
IGSS
Gate-body Leakage
Current (VDS = 0)
Min.
Typ.
200
VGS(th)
Gate Threshold Voltage VDS = VGS, ID = 50µA
Static Drain-source On
Resistance
VGS = 5 V, ID = 2.5 A
Unit
V
1
VGS = ±20V
RDS(on)
Max.
1
0.65
µA
10
µA
±100
nA
2.5
V
0.7
Ω
STD5N20L
Table 6: Dynamic
Symbol
gfs (2)
Parameter
Forward Transconductance
Test Conditions
Min.
VDS = 15 V, ID = 5 A
Typ.
Max.
Unit
6.5
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
242
44
6
pF
pF
pF
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 100 V, ID = 2.5 A
RG = 4.7Ω, VGS = 5V
(Resistive Load see Figure 14)
11.5
21.5
14
15.5
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 160 V, ID = 5 A,
VGS = 5V
5
1.5
3
6
nC
nC
nC
Typ.
Max.
Unit
5
A
20
A
1.5
V
Table 7: Source Drain Diode
Symbol
ISD
Parameter
Test Conditions
Min.
Source-drain Current
ISDM (*)
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
ISD = 5 A, VGS = 0
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 5 A, di/dt = 100 A/µs,
VDD = 100 V, Tj = 25°C
(see test circuit, see Figure 15)
93
237
5.1
ns
nC
A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 5 A, di/dt = 100 A/µs,
VDD = 100 V, Tj = 150°C
(see test circuit, see Figure 15)
97
286
5.9
ns
nC
A
trr
Qrr
IRRM
trr
Qrr
IRRM
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Starting Tj =25 °C, Id = 5 A, VDD = 50 V
(*) Pulse width limited by safe operating area
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STD5N20L
Figure 3: Safe Operating Area
Figure 6: Thermal Impedance
Figure 4: Output Characteristics
Figure 7: Transfer Characteristics
Figure 5: Transconductance
Figure 8: Static Drain-source On Resistance
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STD5N20L
Figure 9: Gate Charge vs Gate-source Voltage
Figure 12: Capacitance Variations
Figure 10: Normalized Gate Thereshold Voltage vs Temperature
Figure 13: Normalized On Resistance vs Temperature
Figure 11: Source-Drain Diode Forward Characteristics
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STD5N20L
Figure 14: Switching Times Test Circuit For
Resistive Load
Figure 15: Test Circuit For Inductive Load
Switching and Diode Recovery Times
6/10
Figure 16: Gate Charge Test Circuit
STD5N20L
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
A
2.20
2.40
0.087
TYP.
MAX.
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
1.00
0.024
L2
L4
V2
0.8
0.60
0
o
0.031
8
o
0
o
0.039
0o
P032P_B
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STD5N20L
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
1.5
C
12.8
D
20.2
G
16.4
N
50
T
TAPE MECHANICAL DATA
DIM.
mm
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
B1
D
1.5
MIN.
MAX.
12.1
0.476
1.6
0.059 0.063
D1
1.5
E
1.65
1.85
F
7.4
7.6
0.291 0.299
K0
2.55
2.75
0.100 0.108
0.059
0.153 0.161
0.065 0.073
P0
3.9
4.1
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
R
40
W
15.7
* on sales type
8/10
inch
1.574
16.3
0.618
0.641
inch
MAX.
MIN.
MAX.
330
12.992
13.2
0.504 0.520
18.4
0.645 0.724
0.059
0.795
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
STD5N20L
Table 8: Revision History
Date
Revision
08-June-2004
20-Sep-2004
2
3
Description of Changes
New Stylesheet. Datasheet according to PCN DSG-TRA/04/532
Changes on Table 3, and on Figure 3.
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STD5N20L
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2004 STMicroelectronics - All Rights Reserved
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