STMICROELECTRONICS STB21NM60N-1

STP21NM60N-STF21NM60N-STW21NM60N
STB21NM60N - STB21NM60N-1
N-CHANNEL 600V - 0.19 Ω - 17 A TO-220/FP/D²/I²PAK/TO-247
SECOND GENERATION MDmesh™ MOSFET
Table 1: General Features
TYPE
STB21NM60N
STB21NM60N-1
STF21NM60N
STP21NM60N
STW21NM60N
■
■
■
Figure 1: Package
VDSS
RDS(on)
660
660
660
660
660
<
<
<
<
<
V
V
V
V
V
0.24
0.24
0.24
0.24
0.24
Ω
Ω
Ω
Ω
Ω
ID
17 A
17 A
17 A (*)
17 A
17 A
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
DESCRIPTION
The STx21NM60N is realized with the second
generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of
the world's lowest on-resistance and gate charge.
It is therefore suitable for the most demanding high
efficiency converters
3
1
3
3
1
2
TO-220
1
D²PAK
2
TO-220FP
3
12
3
I²PAK
2
1
TO-247
Figure 2: Internal Schematic Diagram
APPLICATIONS
The MDmesh™ II family is very suitable for increasing power density of high voltage converters
allowing system miniaturization and higher efficiencies.
Table 2: Order Codes
SALES TYPE
MARKING
PACKAGE
PACKAGING
STB21NM60N
B21NM60N
D2PAK
TAPE & REEL
STB21NM60N-1
B21NM60N
I2PAK
TUBE
STF21NM60N
F21NM60N
TO-220FP
TUBE
STP21NM60N
P21NM60N
TO-220
TUBE
STW21NM60N
W21NM60N
TO-247
TUBE
Rev.3
October 2005
1/16
STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
TO-220 / D2PAK /
I2PAK / TO-247
VDS
VDGR
VGS
Unit
TO-220FP
Drain-source Voltage (VGS = 0)
600
V
Drain-gate Voltage (RGS = 20 kΩ)
600
V
Gate- source Voltage
±25
V
ID
Drain Current (continuous) at TC = 25°C
17
17 (*)
A
ID
Drain Current (continuous) at TC = 100°C
10
10 (*)
A
Drain Current (pulsed)
64
64 (*)
A
Total Dissipation at TC = 25°C
140
30
W
Derating Factor
1.12
0.23
W/°C
IDM ( )
PTOT
dv/dt(1)
Peak Diode Recovery voltage slope
Viso
Insulation Winthstand Voltage (DC)
Tstg
Storage Temperature
Tj
15
--
V/ns
2500
–55 to 150
150
Max. Operating Junction Temperature
V
°C
( ) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
(1) ISD ≤ 16 A, di/dt ≤ 400 A/µs, VDD=80% V(BR)DSS
Table 4: Thermal Data
TO-220 / D²PAK /
I²PAK / TO-247
TO-220FP
0.89
4.21
Rthj-case
Thermal Resistance Junction-case Max
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
°C/W
Tl
Maximum Lead Temperature For Soldering
Purpose
300
°C
Max Value
Unit
Table 5: Avalanche Characteristics
Symbol
2/16
Parameter
IAS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
8.5
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAS, VDD = 50 V)
610
mJ
STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Parameter
Test Conditions
Value
Min.
Typ.
Unit
Max.
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 1mA, VGS = 0
600
V
dv/dt(2)
Drain Source Voltage
Slope
Vdd=480V, Id=17A, Vgs=10V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
100
nA
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 8.5 A
48
2
V/ns
3
4
V
0.190
0.24
Ω
Typ.
Max.
Unit
(2) Characteristic value at turn off on inductive load
Table 7: Dynamic
Symbol
gfs (1)
Ciss
Coss
Crss
Coss eq. (*)
Parameter
Test Conditions
Min.
Forward Transconductance VDS = 15 V, ID = 8 A
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
12
S
1950
508
38.4
pF
pF
pF
Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 400V
282
pF
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Off-voltageRise Time
Fall Time
VDD =300 V, ID = 8.5 A
RG = 4.7Ω VGS = 10 V
(see Figure 20)
22
15
84
31
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 480V, ID = 17 A,
VGS = 10V,
(see Figure 23)
66.6
9.9
33
nC
nC
nC
Rg
Gate Input Resistance
f=1MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
2
Ω
(*) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
Table 8: Source Drain Diode
Symbol
Parameter
ISD
ISDM
Source-drain Current
Source-drain Current (pulsed)
VSD (1)
trr
Qrr
IRRM
trr
Qrr
IRRM
Test Conditions
Min.
Typ.
Max.
Unit
16
64
A
A
1.3
V
Forward On Voltage
ISD = 17 A, VGS = 0
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 17 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 25°C
(see Figure 21)
372
4.6
25
ns
µC
A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 17A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150°C
(see Figure 21)
486
6.3
26
ns
µC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
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STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Figure 3: Safe Operating Area For TO-220/
I²PAK/D²PAK
Figure 6: Thermal Impedance TO-220/I²PAK/
D²PAK
Figure 4: Safe Operating Area For TO-220FP
Figure 7: Thermal Impedance For TO-220FP
Figure 5: Safe Operating Area For TO-247
Figure 8: Thermal Impedance For TO-247
4/16
STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Figure 9: Output Characteristics
Output Characteristics
Figure 12: Transfer Characteristics
Figure 10: Transconductance
Figure 13: Static Drain-Source On Resistance
Figure 11: Gate Charge vs Gate-source Voltage
Figure 14: Capacitance Variations
5/16
STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Figure 15: Normalized Gate Threshold Voltage
vs Temperature
Figure 17: Normalized On Resistance vs Temperature
Figure 16: Source-Drain Forward Characteristics
Figure 18: Normalized BVDSS vs Temperature
6/16
STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Figure 19: Unclamped Inductive Load Test Circuit
Figure 22: Unclamped Inductive Wafeform
Figure 20: Switching Times Test Circuit For
Resistive Load
Figure 23: Gate Charge Test Circuit
Figure 21: Test Circuit For Inductive Load
Switching and Diode Recovery Times
7/16
STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These
packages have a Lead-free second level interconnect . The category of second level interconnect is
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an
ST trademark. ECOPACK specifications are available at: www.st.com
8/16
STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
DIM.
mm
inch
MIN.
MAX.
MIN.
A0
10.5
10.7
0.413 0.421
B0
15.7
15.9
0.618 0.626
MIN.
330
1.5
C
12.8
D
20.2
G
24.4
N
100
T
TAPE MECHANICAL DATA
inch
MAX.
MAX.
12.992
0.059
13.2
0.504 0.520
26.4
0.960 1.039
0795
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
1000
MAX.
D
1.5
1.6
0.059 0.063
D1
1.59
1.61
0.062 0.063
E
1.65
1.85
0.065 0.073
F
11.4
11.6
0.449 0.456
K0
4.8
5.0
0.189 0.197
0.153 0.161
P0
3.9
4.1
P1
11.9
12.1
0.468 0.476
P2
1.9
2.1
0.075 0.082
R
50
1.574
T
0.25
0.35 0.0098 0.0137
W
23.7
24.3
0.933 0.956
* on sales type
9/16
STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
D2PAK MECHANICAL DATA
TO-247 MECHANICAL DATA
mm.
inch
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.7
0.93
0.027
0.036
B2
1.14
1.7
0.044
0.067
C
0.45
0.6
0.017
0.023
C2
1.23
1.36
0.048
0.053
D
8.95
9.35
0.352
0.368
D1
E
8
10
E1
0.315
10.4
0.393
8.5
0.334
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.625
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
M
2.4
3.2
0.094
0.126
R
0.4
0º
0.015
4º
3
V2
1
10/16
STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
TO-262 (I2PAK) MECHANICAL DATA
mm.
inch
DIM.
MAX.
MIN.
A
4.40
MIN.
TYP
4.60
0.173
TYP.
0.181
MAX.
A1
2.40
2.72
0.094
0.107
b
0.61
0.88
0.024
0.034
b1
1.14
1.70
0.044
0.066
c
0.49
0.70
0.019
0.027
c2
1.23
1.32
0.048
0.052
D
8.95
9.35
0.352
0.368
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
E
10
10.40
0.393
0.410
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L2
1.27
1.40
0.050
0.055
11/16
STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
TO-220 MECHANICAL DATA
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
0.551
L
13
14
0.511
L1
3.50
3.93
0.137
L20
16.40
L30
12/16
TYP
0.154
0.645
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
A
4.4
inch
TYP
MAX.
MIN.
TYP.
4.6
0.173
0.181
MAX.
0.106
B
2.5
2.7
0.098
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L7
L3
L6
F2
H
G
G1
F
F1
L7
L2
L5
1 2 3
L4
13/16
STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
TO-247 MECHANICAL DATA
DIM.
mm.
MIN.
inch
MAX.
MIN.
TYP.
MAX.
A
4.85
5.15
0.19
0.20
A1
2.20
2.60
0.086
0.102
b
1.0
1.40
0.039
0.055
b1
2.0
2.40
0.079
0.094
b2
3.0
3.40
0.118
0.134
c
0.40
0.80
0.015
0.03
D
19.85
20.15
0.781
0.793
E
15.45
15.75
0.608
e
5.45
0.620
0.214
L
14.20
14.80
0.560
L1
3.70
4.30
0.14
L2
18.50
0.582
0.17
0.728
øP
3.55
3.65
0.140
0.143
øR
4.50
5.50
0.177
0.216
S
14/16
TYP
5.50
0.216
STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Table 9: Revision History
Date
Revision
22-Sep-2005
05-Oct-2005
26-Oct-2005
1
2
3
Description of Changes
First Release.
Modified curves 9-12
Complete version
15/16
STP21NM60N - STF21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
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by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
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