STP130NS04ZB STB130NS04ZB - STW130NS04ZB N-CHANNEL CLAMPED - 7 mΩ - 80A TO-220/D²PAK/TO-247 FULLY PROTECTED MESH OVERLAY™ MOSFET Figure 1: Package Table 1: General Features TYPE STP130NS04ZB STB130NS04ZB STW130NS04ZB ■ ■ ■ ■ VDSS RDS(on) ID CLAMPED CLAMPED CLAMPED < 9 mΩ < 9 mΩ < 9 mΩ 80 A 80 A 80 A TYPICAL RDS(on) = 7 mΩ 100% AVALANCHE TESTED LOW CAPACITANCE AND GATE CHARGE 175°C MAXIMUM JUNCTION TEMPERATURE DESCRIPTION This fully clamped MOSFET is produced by using the latest advanced Company’s Mesh Overlay process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment .Any other application requiring extra ruggedness is also recommended. 3 1 3 1 2 D²PAK TO-220 3 2 1 TO-247 Figure 2: Internal Schematic Diagram APPLICATIONS ■ HIGH SWITCHING CURRENT ■ LINEAR APPLICATIONS Table 2: Order Codes Sales Type Marking Package Packaging STP130NS04ZB P130NS04ZB TO-220 TUBE STB130NS04ZBT4 B130NS04ZB D²PAK TAPE & REEL STW130NS04ZB W130NS04ZB TO-247 TUBE Rev. 2 February 2005 1/12 STP130NS04ZB - STB130NS04ZB - STW130NS04ZB Table 3: Absolute Maximum ratings Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) CLAMPED V VDG Drain-gate Voltage CLAMPED V VGS Gate- source Voltage CLAMPED V ID Drain Current (continuous) at TC = 25°C 80 A ID Drain Current (continuous) at TC = 100°C 60 A Drain Gate Current (continuous) ± 50 mA IDG Gate Source Current (continuous) ± 50 mA IDM () Drain Current (pulsed) 320 A PTOT Total Dissipation at TC = 25°C 300 W Derating Factor 2.0 W/°C 4 KV -55 to 175 °C IGS VESD(G-S) Tj Tstg Gate-Source ESD(HBM-C=100 pF, R=1.5 KΩ) Max Operating Junction Temperature Storage Temperature () Pulse width limited by safe operating area Table 4: Thermal Data TO-220 Rthj-case Thermal Resistance Junction-case Max Rthj-pcb (*) Thermal Resistance Junction-pcb Max -- Thermal Resistance Junction-ambient Max 62.5 Rthj-a Tl Maximum Lead Temperature For Soldering Purpose (1.6 mm from case, for 10 sec) D²PAK TO-247 0.50 Unit °C/W 35 -- -- 50 °C/W 300 °C (*)When mounted on 1 inch² FR4 2oZ Cu Table 5: Avalanche Characteristics Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 80 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 30 V) 500 mJ 2/12 STP130NS04ZB - STB130NS04ZB - STW130NS04ZB ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 6: On/Off Symbol Parameter Test Conditions Min. Typ. Max. 33 Unit Clamped Voltage ID = 1 mA, VGS = 0 -40 < Tj < 175 °C IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = 16 V,Tj = 25 °C VDS = 16 V,Tj = 125 °C 10 100 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ±10 V,Tj = 25 °C 10 µA VGSS Gate-Source Breakdown Voltage IGS = ±100 µA VGS(th) Gate Threshold Voltage VDS = VGS = ID = 1 mA RDS(on) Static Drain-source On Resistance VGS = 10 V ,ID = 40 A V(BR)DSS V 18 V 2 7 4 V 9 mΩ Table 7: Dynamic Symbol Parameter Test Conditions Forward Transconductance VDS = 15 V, ID = 40 A Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance td(on) tf td(off) tf Qg Qgs Qgd gfs Min. Typ. Max. Unit 50 S VDS = 25 V, f = 1MHz, VGS = 0 2700 1275 285 pF pF pF Turn-on Delay Time Fall Time Turn-off Delay Time Fall Time VDD = 17.5 V, ID = 40 A, RG = 4.7 Ω, VGS = 10 V (see Figure 15) 40 220 170 100 ns ns ns ns Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 20 V, ID = 80 A, VGS = 10 V (see Figure 17) 80 20 27 105 nC nC nC Typ. Max. Unit 80 320 A A 1.5 V Table 8: Source Drain Diode Symbol Parameter ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 80 A, VGS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 80 A, di/dt = 100A/µs VDD = 25V, Tj = 150°C (see Figure 16) trr Qrr IRRM Test Conditions Min. 90 0.18 4 ns µC A (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. 3/12 STP130NS04ZB - STB130NS04ZB - STW130NS04ZB Figure 3: Safe Operating Area Figure 6: Thermal Impedance Figure 4: Output Characteristics Figure 7: Transfer Characteristics Figure 5: Transconductance Figure 8: Static Drain-source On Resistance 4/12 STP130NS04ZB - STB130NS04ZB - STW130NS04ZB Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Normalized On Resistance vs Temperature Figure 10: Normalized Gate Thereshold Voltage vs Temperature Figure 13: Source-drain Diode Forward Characteristics Figure 11: Capacitance Variations Figure 14: Normalized BVDSS vs Temperature 5/12 STP130NS04ZB - STB130NS04ZB - STW130NS04ZB Figure 15: Switching Times Test Circuit For Resistive Load Figure 16: Test Circuit For Diode Recovery Behaviour 6/12 Figure 17: Gate Charge Test Circuit STP130NS04ZB - STB130NS04ZB - STW130NS04ZB TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 7/12 STP130NS04ZB - STB130NS04ZB - STW130NS04ZB TO-263 (D 2PAK) MECHANICAL DATA mm. inch DIM. MAX. MIN. A 4.32 MIN. 4.57 0.178 0.180 A1 0.00 0.25 0.00 0.009 TYP. MAX. b 0.71 0.91 0.028 0.350 b2 1.15 1.40 0.045 0.055 c 0.46 0.61 0.018 0.024 c2 1.22 1.40 0.048 0.055 D 8.89 9.40 0.350 D1 8.01 E 10.04 e 8/12 TYP 9.02 0.355 0.370 0.315 10.28 0.395 2.54 0.404 0.010 H 13.10 13.70 0.515 0.540 L 1.30 1.70 0.051 0.067 L1 1.15 1.39 0.045 0.054 L2 1.27 1.77 0.050 0.069 L4 2.70 3.10 0.106 0.122 V2 0° 8° 0° 8° STP130NS04ZB - STB130NS04ZB - STW130NS04ZB TO-247 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.85 5.15 0.19 0.20 A1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 0.134 b2 3.0 3.40 0.118 c 0.40 0.80 0.015 0.03 D 19.85 20.15 0.781 0.793 E 15.45 15.75 0.608 e 5.45 L 14.20 14.80 0.560 L1 3.70 4.30 0.14 L2 0.620 0.214 18.50 0.582 0.17 0.728 øP 3.55 3.65 0.140 0.143 øR 4.50 5.50 0.177 0.216 S 5.50 0.216 9/12 STP130NS04ZB - STB130NS04ZB - STW130NS04ZB D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 MAX. D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 10/12 inch 0.933 0.956 MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STP130NS04ZB - STB130NS04ZB - STW130NS04ZB Table 9: Revision History Date Revision 10-June-2004 14-Jan-2005 1 2 Description of Changes First Release. Inserted D²PAK, Complete version. 11/12 STP130NS04ZB - STB130NS04ZB - STW130NS04ZB Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners © 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12