STGP7NB60FD - STGB7NB60FD N-CHANNEL 7A - 600V TO-220 / D2PAK PowerMESH™ IGBT TYPE VCES VCE(sat) (Max) @25°C IC @100°C STGP7NB60FD STGB7NB60FD 600 V 600 V < 2.4 V < 2.4 V 7A 7A ■ ■ ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix "F" identifies a family optimized to achieve very low switching switching times for high frequency applications (<40KHZ) 3 3 1 TO-220 2 1 D2PAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS MOTOR CONTROLS ■ SMPS AND PFC AND BOTH HARD SWITCH AND RESONANT TOPOLOGIES ■ ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STGP7NB60FD GP7NB60FD TO-220 TUBE STGB7NB60FDT4 GB7NB60FD D2PAK TAPE & REEL June 2003 1/11 STGP7NB60FD - STGB7NB60FD ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VGS = 0) 600 V VGE V Gate-Emitter Voltage ±20 IC Collector Current (continuous) at TC = 25°C 14 A IC Collector Current (continuous) at TC = 100°C 7 A ICM () Collector Current (pulsed) 56 A PTOT Total Dissipation at TC = 25°C 80 W Derating Factor Tstg Tj Storage Temperature 0.64 W/°C – 55 to 150 °C 150 °C Max. Operating Junction Temperature () Pulse width limited by safe operating area THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.56 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) ICES IGES Parameter Test Conditions Min. Typ. Max. IC = 250 µA, VGE = 0 Collector cut-off (VGE = 0) VCE = Max Rating, TC = 25 °C 50 µA VCE = Max Rating, TC = 125 °C 100 µA VGE = ± 20V , VCE = 0 ±100 nA Max. Unit 5 V 2.4 V Gate-Emitter Leakage Current (VCE = 0) 600 Unit Collector-Emitter Breakdown Voltage V ON (1) Symbol Parameter VGE(th) Gate Threshold Voltage VCE(sat) Collector-Emitter Saturation Voltage 2/11 Test Conditions VCE = VGE, IC = 250 µA Min. Typ. 3 VGE = 15V, IC = 7 A 2.0 VGE = 15V, IC= 7 A, Tj =125°C 1.6 V STGP7NB60FD - STGB7NB60FD ELECTRICAL CHARACTERISTICS (CONTINUED) DYNAMIC Symbol gfs (1) Parameter Test Conditions Forward Transconductance VCE = 25 V, Ic = 7 A Cies Input Capacitance VCE = 25V, f = 1 MHz, VGE = 0 Coes Min. Typ. Max. Unit 6 S 540 pF Output Capacitance 80 pF Cres Reverse Transfer Capacitance 13 pF Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 480V, IC = 7 A, VGE = 15V 37 4 18 ICL Latching Current Vclamp = 480 V Tj = 125°C , RG = 10 Ω 28 50 nC nC nC A SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Test Conditions Min. Typ. Max. Unit Turn-on Delay Time Rise Time VCC = 480 V, IC = 7 A RG = 10Ω , VGE = 15 V 17 6 ns ns Turn-on Current Slope Turn-on Switching Losses VCC= 480 V, IC = 7 A RG=10Ω VGE = 15 V,Tj =125°C 890 59 A/µs µJ SWITCHING OFF Symbol tc Parameter Cross-over Time Test Conditions Min. Vcc = 480 V, IC = 7 A, RG = 10 Ω , VGE = 15 V Typ. Max. Unit 190 ns tr(Voff) Off Voltage Rise Time 45 ns td(off) Delay Time 107 ns Fall Time 140 ns Turn-off Switching Loss 240 µJ Total Switching Loss 300 µJ 410 ns tf Eoff(**) Ets tc Cross-over Time Vcc = 480 V, IC = 7 A, RG = 10 Ω , VGE = 15 V Tj = 125 °C tr(Voff) Off Voltage Rise Time 195 ns td(off) Delay Time 204 ns Fall Time 650 ns Turn-off Switching Loss 565 µJ Total Switching Loss 625 µJ tf Eoff(**) Ets COLLECTOR-EMITTER DIODE Symbol Parameter Test Conditions Min. Typ. If Ifm Forward Current Forward Current pulsed Vf Forward On-Voltage If = 3.5 A If = 3.5 A, Tj = 125 °C 1.4 1.1 trr Qrr Irrm Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 7 A ,VR = 40 V, Tj =125°C, di/dt = 100 A/µs 50 70 2.7 Max. Unit 7 56 A A 1.9 V V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by max. junction temperature. (**)Losses include Also the Tail (Jedec Standardization) 3/11 STGP7NB60FD - STGB7NB60FD Output Characteristics Transconductance Transfer Characteristics Normalized Collector-Emitter On Voltage vs Temp. Collector-Emitter On Voltage vs Collector Current Gate Threshold vs Temperature 4/11 STGP7NB60FD - STGB7NB60FD Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance Total Switching Losses vs Temperature Total Switching Losses vs Collector Current 5/11 STGP7NB60FD - STGB7NB60FD Thermal Impedance for TO-220/D²PAK Emitter-Collector Diode Characteristics 6/11 Turn-Off SOA STGP7NB60FD - STGB7NB60FD Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 7/11 STGP7NB60FD - STGB7NB60FD TO-220 MECHANICAL DATA DIM. 8/11 mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 L 13 14 0.511 0.551 L1 3.50 3.93 0.137 0.154 L20 16.40 L30 28.90 0.645 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 STGP7NB60FD - STGB7NB60FD D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 4º 3 V2 0.4 9/11 1 STGP7NB60FD - STGB7NB60FD D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 10/11 0.075 0.082 0.933 0.956 MAX. MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STGP7NB60FD - STGB7NB60FD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 11/11