STS3C3F30L N-CHANNEL 30V - 0.050 Ω - 3.5A SO-8 P-CHANNEL 30V - 0.140 Ω - 3A SO-8 STripFET™ II POWER MOSFET ■ ■ ■ ■ TYPE VDSS RDS(on) ID STS3C3F30L(N-Channel) STS3C3F30L(P-Channel) 30 V 30 V < 65 mΩ < 165 mΩ 3.5 A 3A TYPICAL RDS(on) (N-Channel) = 50 mΩ TYPICAL RDS(on) (P-Channel) = 140 mΩ STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION SO-8 This application specific Power MOSFET is the second generation of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ DC/DC CONVERTERS ■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT ■ POWER MANAGEMENT IN CELLULAR PHONES ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter P-CHANNEL Unit 30 V Drain-gate Voltage (RGS = 20 kΩ) 30 V ± 16 V Gate- source Voltage ID Drain Current (continuos) at TC = 25°C Single Operating 3.5 2.7 A ID Drain Current (continuos) at TC = 100°C Single Operating 2.2 1.7 A Drain Current (pulsed) 14 11 A IDM(•) Ptot Total Dissipation at TC = 25°C Dual Operating Total Dissipation at TC = 25°C Single Operating Tstg Storage Temperature Tj Max. Operating Junction Temperature (•) Pulse width limited by safe operating area. February 2002 . N-CHANNEL Drain-source Voltage (VGS = 0) 1.6 2 W W -60 to 150 °C 150 °C Note: P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed 1/10 STS3C3F30L THERMAL DATA Rthj-amb(1) Tl Thermal Resistance Junction-ambient Single Operation Dual Operating Maximum Lead Temperature For Soldering Purpose 62.5 78 300 °C/W °C/W °C (1) when mounted on 0.5 in2 pad of 2 oz. copper ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 16 V V(BR)DSS Min. Typ. Max. 30 Unit V 1 10 µA µA ±100 nA Max. Unit ON Symbol Parameter Test Conditions Min. VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA n-ch p-ch RDS(on) Static Drain-source On Resistance VGS = 10 V VGS = 10 V VGS = 4.5 V VGS = 4.5 V ID = 1.75 A ID = 1.5 A ID = 1.75 A ID = 1.5 A n-ch p-ch n-ch p-ch Typ. 1 1 V V 50 140 60 160 65 165 90 200 mΩ mΩ mΩ mΩ Typ. Max. Unit DYNAMIC Symbol 2/10 Parameter gfs (*) Forward Transconductance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Test Conditions VDS = 15 V VDS = 15 V ID= 1.75 A ID= 1.5 A Min. n-ch p-ch 5.5 4 S S n-ch p-ch 320 420 pF pF VDS = 25V, f = 1 MHz, VGS = 0 n-ch p-ch 90 95 pF pF n-ch p-ch 40 30 pF pF STS3C3F30L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions N-CHANNEL ID = 1.75 A VDD = 15 V RG = 4.7 Ω VGS = 4.5 V P-CHANNEL VDD = 15 V ID = 1.5 A RG = 4.7 Ω VGS = 4.5 V (Resistive Load, Figure 1) Min. Typ. Max. Unit n-ch p-ch 27 14.5 ns ns n-ch p-ch 40 37 ns ns n-ch p-ch 8.5 4.8 n-ch P-CHANNEL VDD = 24V ID = 3A VGS = 4.5V p-ch n-ch (see test circuit, Figure 2) p-ch 2 1.7 4 2 N-CHANNEL VDD=24V ID=3.5A VGS=4.5V 12 7 nC nC nC nC nC nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions N-CHANNEL ID = 1.75 A VDD = 15 V RG = 4.7 Ω VGS = 4.5 V P-CHANNEL VDD = 15 V ID = 1.5 A RG = 4.7 Ω VGS = 4.5 V (Resistive Load, Figure 1) Min. Typ. Max. Unit n-ch p-ch 30 90 ns ns n-ch p-ch 20 23 ns ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Source-drain Current ISDM (•) Source-drain Current (pulsed) VSD(∗) Forward On Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ISD = 3.5 A ISD = 3 A VGS = 0 VGS = 0 N-CHANNEL ISD = 3.5 A di/dt = 100A/µs Tj =150 oC VDD = 15 V P-CHANNEL di/dt = 100A/µs ISD = 3 A Tj =150 oC VDD = 15 V (see test circuit, Figure 3) Min. Typ. Max. Unit n-ch p-ch n-ch p-ch 3.5 3 14 12 A A A A n-ch p-ch 1.2 1.2 V V n-ch p-ch 28 35 ns ns n-ch p-ch n-ch p-ch 18 25 1.3 1.5 nC nC A A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•) Pulse width limited by safe operating area. 3/10 STS3C3F30L Safe Operating Area n-ch Thermal Impedance n-ch Output Characteristics n-ch Transfer Characteristics n-ch Transconductance n-ch Static Drain-source On Resistance n-ch 4/10 STS3C3F30L Gate Charge vs Gate-source Voltage n-ch Normalized Gate Threshold Voltage vs Temperature Capacitance Variations n-ch n-ch Normalized on Resistance vs Temperature n-ch Source-drain Diode Forward Characteristics n-ch 5/10 STS3C3F30L Safe Operating Area p-ch Thermal Impedance p-ch Output Characteristics p-ch Transfer Characteristics p-ch Transconductance p-ch Static Drain-source On Resistance p-ch 6/10 STS3C3F30L Gate Charge vs Gate-source Voltage p-ch Normalized Gate Threshold Voltage vs Temperature Capacitance Variations p-ch p-ch Normalized on Resistance vs Temperature p-ch Source-drain Diode Forward Characteristics p-ch 7/10 STS3C3F30L Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 3: Test Circuit For Diode Recovery Behaviour 8/10 Fig. 2: Gate Charge test Circuit STS3C3F30L SO-8 MECHANICAL DATA mm DIM. MIN. TYP. A a1 MAX. MIN. TYP. 1.75 0.1 0.003 0.009 1.65 0.65 MAX. 0.068 0.25 a2 a3 inch 0.064 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 c1 45 (typ.) D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M S 0.6 0.023 8 (max.) 0016023 9/10 STS3C3F30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 10/10