STS4DNFS30L N-CHANNEL 30V - 0.044Ω - 4A SO-8 STripFET™ II MOSFET PLUS SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS MOSFET SCHOTTKY VDSS RDS(on) ID 30 V < 0.055 Ω 4A IF(AV) VRRM VF(MAX) 3A 30 V 0.51 V SO-8 DESCRIPTION This product associates the latest low voltage STripFET™ in n-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones. INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (●) PTOT Value Unit Drain-source Voltage (VGS = 0) Parameter 30 V Drain-gate Voltage (RGS = 20 kΩ) 30 V ± 16 V Drain Current (continuous) at TC = 25°C 4 A Gate- source Voltage Drain Current (continuous) at TC = 100°C 2.5 A Drain Current (pulsed) 16 A Total Dissipation at TC = 25°C 2 W Value Unit Repetitive Peak Reverse Voltage 30 V RMS Forward Current 20 A SCHOTTKY ABSOLUTE MAXIMUM RATINGS Symbol VRRM IF(RMS) Parameter IF(AV) Average Forward Current TL = 125°C δ = 0.5 3 A IFSM Surge Non Repetitive Forward Current tp = 10 ms Sinusoidal 75 A IRRM Repetitive Peak Reverse Current tp = 2 µs F=1 kHz 1 A IRSM Non Repetitive Peak Reverse Current tp = 100 µs 1 A dv/dt Critical Rate Of Rise Of Reverse Voltage 10000 V/µs (•)Pulse width limited by safe operating area July 2002 1/8 STS4DNFS30L THERMAL DATA Rthj-amb Tstg Tl (*)Thermal Resistance Junction-ambient MOSFET 62.5 °C/W Storage Temperature Range -55 to 150 °C Junction Temperature -55 to 150 °C (*) Mounted on FR-4 board (Steady State) MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 16 V V(BR)DSS Min. Typ. Max. 30 Unit V VDS = Max Rating, TC = 125 °C 1 µA 10 µA ±100 nA Typ. Max. Unit ON (1) Symbol Parameter Test Conditions Min. VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 2 A 0.044 0.055 Ω VGS = 5V, ID = 2 A 0.051 0.065 Ω Typ. Max. Unit 1 V DYNAMIC Symbol gfs (1) 2/8 Parameter Forward Transconductance Test Conditions VDS = 15 V , ID = 2 A VDS = 25V, f = 1 MHz, VGS = 0 Min. 5 S 330 pF Ciss Input Capacitance Coss Output Capacitance 90 pF Crss Reverse Transfer Capacitance 40 pF STS4DNFS30L ELECTRICAL CHARACTERISTICS (CONTINUED) 1. SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 15 V, ID = 2 A RG = 4.7 Ω VGS = 5 V (see test circuit, Figure 1) VDD = 24 V, ID = 4 A, VGS = 5 V Typ. Max. Unit 11 ns 100 ns 6.5 9 nC 3.6 nC 2 nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions Min. VDD = 15 V, ID = 2 A, RG = 4.7Ω, VGS = 5 V (see test circuit, Figure 1) Typ. Max. 25 22 Unit ns ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Source-drain Current ISDM (2) Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 4 A, VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 4 A, di/dt = 100A/µs, VDD = 15 V, Tj = 150°C (see test circuit, Figure 3) IRRM Reverse Recovery Current Max. Unit 4 A 16 A 1.2 V 35 ns 25 nC 1.4 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STS4DNFS30L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STS4DNFS30L Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STS4DNFS30L Fig. 1: Switching Times Test Circuit For Resistive Load Fig. 3: Test Circuit For Diode Recovery Behaviour 6/8 Fig. 2: Gate Charge test Circuit STS4DNFS30L SO-8 MECHANICAL DATA mm DIM. MIN. TYP. A a1 MAX. MIN. TYP. 1.75 0.1 0.003 0.009 1.65 0.65 MAX. 0.068 0.25 a2 a3 inch 0.064 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 C 0.25 0.5 0.010 0.019 D 4.8 5.0 0.188 0.196 E 5.8 6.2 0.228 0.244 c1 45 (typ.) e 1.27 0.050 e3 3.81 0.150 F 3.8 4.0 0.14 0.157 L 0.4 1.27 0.015 0.050 M S 0.6 0.023 8 (max.) 0016023 7/8 STS4DNFS30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com 8/8