T4 Series ® 4A TRIACS SNUBBERLESS™ & LOGIC LEVEL MAIN FEATURES: A2 Symbol Value Unit IT(RMS) 4 A VDRM/VRRM 600 to 800 V IGTT (Q1) 5 to 35 G A1 A2 A2 mA A1 A2 G A1 A2 G DPAK (T4-B) DESCRIPTION Based on ST’s Snubberless / Logic level technology providing high commutation performances, the T4 series is suitable for use on AC inductive loads. They are recommended for applications using universal motors, electrovalves.... such as kitchen aid equipments, power tools, dishwashers,... Available in a fully insulated package, the T4...-...W version complies with UL standards (ref. E81734). IPAK (T4-H) A2 A1 A2 A1 A2 G TO-220AB (T4-T) G ISOWATT 220AB (T4-W) ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) ITSM I ²t Parameter RMS on-state current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I²t Value for fusing Value DPAK / IPAK TO-220AB Tc = 110°C ISOWATT 220AB Tc = 105°C F = 50 Hz t = 20 ms 30 F = 60 Hz t = 16.7 ms 31 Unit A 4 tp = 10 ms A 5.1 A² s dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 4 A Tj = 125°C 1 W - 40 to + 150 - 40 to + 125 °C PG(AV) Tstg Tj Average gate power dissipation Storage junction temperature range Operating junction temperature range June 2003 - Ed: 5 1/8 T4 Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol IGT (1) VGT Test Conditions VD = 12 V Quadrant RL = 30 Ω VGD VD = VDRM RL = 33 kΩ Tj = 125°C IH (2) IT = 100 mA IL IG = 1.2 IGT T4 5 10 35 I - II - III MAX. 1.3 I - II - III MIN. 0.2 VD = 67 %VDRM gate open Tj = 125°C (dI/dt)c (2) (dV/dt)c = 0.1 V/µs T435 MAX. Tj = 125°C mA V V MAX. 10 15 35 mA MAX. 10 25 50 mA 15 30 60 MIN. 20 40 400 V/µs MIN. 1.8 2.7 - A/ms II dV/dt (2) T410 I - II - III I - III Unit T405 (dV/dt)c = 10 V/µs Tj = 125°C 0.9 2.0 - Without snubber Tj = 125°C - - 2.5 STATIC CHARACTERISTICS Symbol VTM (2) Test Conditions ITM = 5.5 A tp = 380 µs Tj = 25°C MAX. Value Unit 1.6 V Vto (2) Threshold voltage Tj = 125°C MAX. 0.9 V Rd (2) Dynamic resistance Tj = 125°C MAX. 120 mΩ IDRM VDRM = VRRM Tj = 25°C 5 µA 1 mA Value Unit IRRM Tj = 125°C MAX. Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 THERMAL RESISTANCES Symbol Rth(j-c) Rth(j-a) Parameter Junction to case (AC) Junction to ambient S = Copper surface under tab 2/8 T S = 0.5 cm² DPAK IPAK TO-220AB 2.6 °C/W ISOWATT220AB 4.0 DPAK 70 TO-220AB ISOWATT220AB 60 IPAK 100 °C/W T4 Series PRODUCT SELECTOR Voltage (xxx) Part Number Sensitivity Type Package X 5 mA Logic level DPAK X X 5 mA Logic level IPAK X X X 5 mA Logic level TO-220AB T405-xxxW X X X 5 mA Logic level ISOWATT220AB T410-xxxB X X X 10 mA Logic level DPAK T410-xxxH X X X 10 mA Logic level IPAK T410-xxxT X X X 10 mA Logic level TO-220AB T410-xxxW X X X 10 mA Logic level ISOWATT220AB T435-xxxB X X X 35 mA Snubberless DPAK T435-xxxH X X X 35 mA Snubberless IPAK T435-xxxT X X X 35 mA Snubberless TO-220AB T435-xxxW X X X 35 mA Snubberless ISOWATT220AB 600 V 700 V 800 V T405-xxxB X X T405-xxxH X T405-xxxT ORDERING INFORMATION T 4 05 - 600 B (-TR) TRIAC SERIES CURRENT: 4A VOLTAGE: 600: 600V 700: 700V 800: 800V SENSITIVITY: 05: 05mA 10: 10mA 35: 35mA PACKING MODE: Blank: Tube -TR: DPAK Tape & Reel PACKAGE: B: DPAK H: IPAK T: TO-220AB W: ISOWATT220AB OTHER INFORMATION Part Number Marking Weight Base quantity Packing mode T4xx-yyyB T4xxyyyB 0.3 g 75 Tube T4xx-yyyB-TR T4xxyyyB 0.3 g 2500 Tape & reel T4xx-yyyH T4xxyyy 0.4 g 75 Tube T4xx-yyyT T4xxyyyT 2.3 g 50 Tube T4xx-yyyW T4xxyyyW 2.1 g 50 Tube Note: xx = sensitivity, yyy = voltage 3/8 T4 Series Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle). Fig. 2-1: RMS on-state current case versus temperature (full cycle). P(W) IT(RMS)(A) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 6 5 4 3 2 1 IT(RMS)(A) 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Fig. 2-2: RMS on-state current versus ambient temperature (printed circuit FR4, copper thickness: 35µm),full cycle. TO-220AB/DPAK/IPAK ISOWATT220AB Tc(°C) 0 50 75 100 125 Fig. 3: Relative variation of thermal impedance versus pulse duration. K=[Zth/Rth] IT(RMS)(A) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 25 1E+0 DPAK (S=0.5cm²) Rth(j-c) ISOWATT220AB Rth(j-a) TO-220AB/DPAK/IPAK 1E-1 TO-220AB/ISOWATT220AB DPAK/IPAK Tamb(°C) 0 25 50 tp(s) 75 100 125 Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). 1E-2 1E-2 1E+0 1E+1 1E+2 5E+2 Fig. 5: Surge peak on-state current versus number of cycles. IGT,IH,IL [Tj] / IGT,IH,IL [Tj=25°C] ITSM(A) 2.5 2.0 1E-1 35 30 IGT t=20ms 25 1.5 One cycle Non repetitive Tj initial=25°C 20 IH & IL 15 1.0 Repetitive Tc=110°C 10 0.5 5 Tj(°C) 0.0 -40 4/8 -20 0 20 40 60 80 100 120 140 0 Number of cycles 1 10 100 1000 T4 Series Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. Fig. 7: values). On-state characteristics (maximum ITM(A) ITSM (A), I²t (A²s) 30.0 500 Tj initial=25°C 10.0 dI/dt limitation: 50A/µs 100 ITSM Tj=Tj max. 1.0 10 I²t Tj max.: Vto= 0.90 V Rd= 120 mΩ tp (ms) 10.00 VTM(V) 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 8: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature. 1 0.01 0.10 1.00 (dI/dt)c [Tj] / (dI/dt)c [Tj specified] (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.1 5 4 3 T435 2 T410 T405 1 (dV/dt)c (V/µs) 1.0 Tj(°C) 10.0 100.0 0 0 25 50 75 100 125 Fig. 10: DPAK thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35µm). Rth(j-a) (°C/W) 100 90 80 70 60 50 40 30 20 10 0 DPAK S(cm²) 0 4 8 12 16 20 24 28 32 36 40 5/8 T4 Series PACKAGE MECHANICAL DATA DPAK (Plastic) DIMENSIONS REF. Millimeters Min. R R FOOTPRINT DIMENSIONS (in millimeters) DPAK (Plastic) 6.7 6.7 3 3 1.6 1.6 2.3 6/8 2.3 A A1 A2 B B2 C C2 D E G H L2 L4 R V2 Max 2.20 2.40 0.90 1.10 0.03 0.23 0.64 0.90 5.20 5.40 0.45 0.60 0.48 0.60 6.00 6.20 6.40 6.60 4.40 4.60 9.35 10.10 0.80 typ. 0.60 1.00 0.2 typ. 0° 8° Inches Min. Max. 0.086 0.094 0.035 0.043 0.001 0.009 0.025 0.035 0.204 0.212 0.017 0.023 0.018 0.023 0.236 0.244 0.251 0.259 0.173 0.181 0.368 0.397 0.031 typ. 0.023 0.039 0.007 typ. 0° 8° T4 Series PACKAGE MECHANICAL DATA ISOWATT220AB (Plastic) DIMENSIONS REF. Millimeters Min. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Diam Inches Max. Min. 4.40 4.60 2.50 2.70 2.50 2.75 0.40 0.70 0.75 1.00 1.15 1.70 1.15 1.70 4.95 5.20 2.40 2.70 10.00 10.40 16.00 typ. 28.60 30.60 9.80 10.60 15.90 16.40 9.00 9.30 3.00 3.20 Max. 0.173 0.181 0.098 0.106 0.098 0.108 0.016 0.028 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.205 0.094 0.106 0.394 0.409 0.630 typ. 1.125 1.205 0.386 0.417 0.626 0.646 0.354 0.366 0.118 0.126 PACKAGE MECHANICAL DATA TO-220AB (Plastic) DIMENSIONS REF. B b2 Min. L F I A l4 c2 a1 l3 l2 a2 b1 M c1 e Millimeters Inches C Typ. Max. Min. Typ. A a1 15.20 a2 B 13.00 10.00 14.00 0.511 10.40 0.393 0.551 0.409 b1 b2 C c1 0.61 1.23 4.40 0.49 0.88 1.32 4.60 0.70 0.024 0.048 0.173 0.019 0.034 0.051 0.181 0.027 c2 e 2.40 2.40 2.72 2.70 0.094 0.094 0.107 0.106 F I I4 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 15.80 16.40 16.80 0.622 0.646 0.661 L 2.65 2.95 0.104 0.116 l2 l3 1.14 1.14 1.70 1.70 0.044 0.044 0.066 0.066 M 15.90 0.598 Max. 3.75 2.60 0.625 0.147 0.102 7/8 T4 Series PACKAGE MECHANICAL DATA IPAK (Plastic) DIMENSIONS REF. Millimeters Min. A E C2 B2 L2 D H L L1 B3 B6 B A1 V1 B5 G C A3 A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 V1 Typ. Inches Max. Min. 2.4 1.1 1.3 0.9 5.4 0.85 0.086 0.035 0.027 0.025 0.204 2.2 0.9 0.7 0.64 5.2 0.3 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 10° Typ. Max. 0.094 0.043 0.051 0.035 0.212 0.033 0.035 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.031 0.039 10° Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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