CMPDM7002A CMPDM7002AG* SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-23 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPDM7002A and CMPDM7002AG are special versions of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. These special devices offer low rDS(ON) and low VDS (ON). MARKING CODES: CMPDM7002A: C702A CMPDM7002AG*: 702G * Device is Halogen Free by design MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Body Diode) Maximum Pulsed Drain Current Maximum Pulsed Source Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VDS VDG VGS ID IS IDM ISM PD TJ, Tstg ΘJA ELECTRICAL CHARACTERISTICS: (TA=25°C unless SYMBOL TEST CONDITIONS IGSSF, IGSSR VGS=20V, VDS=0 IDSS VDS=60V, VGS=0 IDSS VDS=60V, VGS=0, TJ=125°C ID(ON) VGS=10V, VDS=10V BVDSS VGS=0, ID=10μA VGS(th) VDS=VGS, ID=250μA VDS(ON) VGS=10V, ID=500mA VDS(ON) VGS=5.0V, ID=50mA VSD VGS=0, IS=400mA rDS(ON) VGS=10V, ID=500mA rDS(ON) VGS=10V, ID=500mA, TJ=125°C rDS(ON) VGS=5.0V, ID=50mA rDS(ON) VGS=5.0V, ID=50mA, TJ=125°C gFS VDS=10V, ID=200mA Crss VDS=25V, VGS=0, f=1.0MHz Ciss VDS=25V, VGS=0, f=1.0MHz Coss VDS=25V, VGS=0, f=1.0MHz ton, toff VDD=30V, VGS=10V, ID=200mA, RG=25Ω, RL=150Ω 60 60 40 280 280 1.5 1.5 350 -65 to +150 357 UNITS V V V mA mA A A mW °C °C/W otherwise noted) MIN 500 60 1.0 MAX 100 1.0 500 5.0 50 25 UNITS nA μA μA mA V V V V V Ω Ω Ω Ω mS pF pF pF 20 ns 2.5 1.0 0.15 1.2 2.0 3.5 3.0 5.0 80 R4 (27-January 2010) CMPDM7002A CMPDM7002AG* SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODES: CMPDM7002A: C702A CMPDM7002AG*: 702G * Device is Halogen Free by design R4 (27-January 2010) w w w. c e n t r a l s e m i . c o m