DIODES ZXMN3A04K

ZXMN3A04K
30V N-CHANNEL ENHANCEMENT MODE MOSFET IN DPAK
SUMMARY
V(BR)DSS=30V : RDS(on)=0.02 ; ID=18.4A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex
utilizes a unique structure that combines the benefits of
low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage
power management applications.
FEATURES
DPAK
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• DPAK (TO252) package
APPLICATIONS
• DC-DC converters
• Power management functions
• Disconnect switches
• Motor control
PINOUT
ORDERING INFORMATION
DEVICE
REEL
SIZE
TAPE WIDTH
QUANTITY PER
REEL
13”
16mm
2500 units
ZXMN3A04KTC
DEVICE MARKING
• ZXMN
TOP VIEW
3A04K
ISSUE 1 - FEBRUARY 2004
1
SEMICONDUCTORS
ZXMN3A04K
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-source voltage
V DSS
30
V
V GS
±20
V
ID
Gate-source voltage
Continuous drain current @ V GS =10V; T A =25°C
Pulsed drain current
(b)
18.4
A
@ V GS =10V; T A =70°C (b)
14.7
A
@ V GS =10V; T A =25°C (a)
12.0
A
66
A
(c)
Continuous source current (body diode)
I DM
(b)
IS
Pulsed source current (body diode) (c)
I SM
Power dissipation at T A =25°C (a)
PD
Linear derating factor
Power dissipation at T A =25°C (b)
PD
Linear derating factor
Power dissipation at T A =25°C (d)
PD
Linear derating factor
T j , T stg
Operating and storage temperature range
11.5
A
66
A
4.3
W
34.4
mW/°C
10.1
W
80.8
mW/°C
2.15
W
17.2
mW/°C
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to ambient (a)
R ⍜JA
29
°C/W
Junction to ambient
(b)
R ⍜JA
12.3
°C/W
Junction to ambient
(d)
R ⍜JA
58
°C/W
NOTES
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at ⱕ 10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300␮s - pulse width limited by maximum junction temperature.
(d) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 1 - FEBRUARY 2004
SEMICONDUCTORS
2
ZXMN3A04K
TYPICAL CHARACTERISTICS
ISSUE 1 - FEBRUARY 2004
3
SEMICONDUCTORS
ZXMN3A04K
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
V (BR)DSS
30
TYP.
MAX. UNIT CONDITIONS
STATIC
Drain-source breakdown voltage
V
I D = 250␮A, V GS =0V
Zero gate voltage drain current
I DSS
0.5
␮A
V DS = 30V, V GS =0V
Gate-body leakage
I GSS
100
nA
V GS =±20V, V DS =0V
Gate-source threshold voltage
Static drain-source on-state resistance
Forward transconductance
DYNAMIC
1.0
V GS(th)
(1)
(1) (3)
R DS(on)
g fs
22.1
V
I D = 250mA, V DS =V GS
0.02
⍀
V GS = 10V, I D = 12A
0.03
⍀
V GS = 4.5V, I D = 9.8A
S
V DS = 15V, I D = 12.6A
(3)
Input capacitance
C iss
1890
pF
Output capacitance
C oss
349
pF
Reverse transfer capacitance
C rss
218
pF
Turn-on-delay time
t d(on)
5.2
ns
Rise time
tr
6.1
ns
V DD = 15V, I D = 1A
ns
R G ≅6.0⍀, V GS = 10V
SWITCHING
V DS = 15V, V GS =0V
f=1MHz
(2) (3)
Turn-off delay time
t d(off)
38.1
Fall time
tf
20.2
ns
Total gate charge
Qg
19.9
nC
Total gate charge
Qg
36.8
nC
Gate-source charge
Q gs
5.8
nC
Gate drain charge
Q gd
7.1
nC
Diode forward voltage (1)
V SD
0.85
Reverse recovery time (3)
t rr
Reverse recovery charge (3)
Q rr
V DS = 15V, V GS = 5V
I D = 6.5A
V DS = 15V, V GS = 10V
I D = 6.5A
SOURCE-DRAIN DIODE
0.95
V
T j =25°C, I S = 6.8A,
V GS =0V
18.4
ns
11
nC
T j =25°C, I S = 2.3A,
di/dt=100A/␮s
NOTES
(1) Measured under pulsed conditions. Pulse width ⱕ 300␮s; duty cycle ⱕ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - FEBRUARY 2004
SEMICONDUCTORS
4
ZXMN3A04K
TYPICAL CHARACTERISTICS
ISSUE 1 - FEBRUARY 2004
5
SEMICONDUCTORS
ZXMN3A04K
TYPICAL CHARACTERISTICS
ISSUE 1 - FEBRUARY 2004
SEMICONDUCTORS
6
ZXMN3A04K
PACKAGE OUTLINE
Controlling dimensions are in millimeters. Approximate conversions are given in inches
PACKAGE DIMENSIONS
DIM
Millimeters
Inches
Millimeters
DIM
Max
Min
Max
2.18
2.38
0.086
0.094
e
A1
ᎏ
0.127
0.005
H
9.40
10.41
0.370
0.410
b
0.635
0.89
0.025
0.035
L
1.40
1.78
0.055
0.070
b2
0.762
1.114
0.030
0.045
L1
2.74 REF
0.108 REF
b3
5.20
5.46
0.205
0.215
L2
0.051 BSC
0.020 BSC
A
Min
Max
Inches
Min
2.30 BSC
Min
Max
0.090 BSC
c
0.457
0.609
0.018
0.024
L3
0.89
1.27
0.035
c2
0.457
0.584
0.018
0.023
L4
0.635
1.01
0.025
0.040
D
5.97
6.22
0.235
0.245
L5
1.14
1.52
0.045
0.060
⍜1⬚
0ⴗ
10ⴗ
0
10
⍜⬚
0ⴗ
15ⴗ
0ⴗ
15
D1
5.20
ᎏ
0.205
E
6.35
6.73
0.250
E1
4.32
ᎏ
0.170
0.265
0.050
© Zetex plc 2004
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This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to
www.zetex.com
ISSUE 1 - FEBRUARY 2004
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SEMICONDUCTORS