DIODES ZXMP4A16KTC

ZXMP4A16K
40V P-channel enhancement mode MOSFET
Summary
V(BR)DSS= -40V; RDS(ON)= 0.060⍀ ID= -9.9A
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage,
power management applications.
Features
D
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
DPAK package
G
S
Applications
•
DC - DC converters
•
Audio output stages
•
Relay and solenoid driving
•
Motor control
Ordering information
Device
Reel size
(inches)
Tape width
Quantity per reel
13
16mm
2500 units
ZXMP4A16KTC
Device marking
Pinout - Top view
ZXMP
4A16
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ZXMP4A16K
Absolute maximum rating
Parameter
Symbol
Limit
Unit
Drain-source voltage
VDSS
-40
V
Gate-source voltage
VGS
±20
V
-9.9
A
-8.0
A
-6.6
A
IDM
-35
A
IS
-10.1
A
Pulsed source current (body diode) (c)
ISM
-35
A
Power dissipation at TA=25°C (a)
PD
4.2
W
33.6
mW/°C
9.5
W
76
mW/°C
PD
2.15
17.2
W
mW/°C
Tj:Tstg
-55 to +150
°C
Symbol
Value
Unit
Junction to ambient (a)
R⍜JA
30
°C/W
Junction to ambient (b)
R⍜JA
13.2
°C/W
Junction to ambient (d)
R⍜JA
58
°C/W
Continuous drain current
VGS= -10V; TA=25°C (b)
ID
VGS= -10V; TA=70°C (b)
VGS= -10V; TA=25°C (a)
Pulsed drain current (c)
Continuous source current (body diode) (b)
Linear derating factor
PD
Power dissipation at TA=25°C (b)
Linear derating factor
Power dissipation at TA=25°C (d)
Linear derating factor
Operating and storage temperature range
Thermal resistance
Parameter
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300␮s - pulse width limited by maximum
junction temperature.
(d) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
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ZXMP4A16K
Characteristics
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ZXMP4A16K
Electrical characteristics (at TA = 25°C unless otherwise stated)
Parameter
Symbol
Min.
V(BR)DSS
-40
Typ.
Max.
Unit
Conditions
Static
Drain-source breakdown
voltage
Zero gate voltage drain current IDSS
Gate-body leakage
IGSS
Gate-source threshold voltage
VGS(th)
Static drain-source on-state
resistance (*)
RDS(on)
V
ID=-250␮A, VGS=0V
-1
␮A
VDS=-40V, VGS=0V
100
nA
VGS =±20V, VDS=0V
-1.0
Forward transconductance (*)(‡) gfs
V
ID=-250␮A,
VDS=VGS
0.060
⍀
VGS=-10V, ID=-3.8A
0.100
⍀
VGS=-4.5V, ID=-2.9A
7.4
S
VDS=-15V,ID=-3.8A
Dynamic (‡)
Input capacitance
Ciss
965
pF
Output capacitance
Coss
180
pF
Reverse transfer capacitance
Crss
158
pF
Turn-on delay time
td(on)
4.0
ns
Rise time
tr
6.0
ns
Turn-off delay time
td(off)
36.8
ns
Fall time
tf
17.1
ns
Gate charge
Qg
16.5
nC
Total gate charge
Qg
29.6
nC
Gate-source charge
Qgs
2.8
nC
Gate-drain charge
Qgd
8.1
nC
Diode forward voltage (*)
VSD
-0.89
Reverse recovery time (‡)
trr
Qrr
VDS=-20V, VGS=0V,
f=1MHz
Switching (†) (‡)
VDD =-20V, ID=-1A
RG=6.0⍀,VGS=-10V
VDS=-20V,VGS=-5V,
ID=-3.8A
VDS=-20V,VGS=-10V,
ID=-3.8A
Source-drain diode
Reverse recovery charge
(‡)
-1.2
V
TJ=25°C, IS=-3.8A,
VGS=0V
29.8
ns
37.2
nC
TJ=25°C, IF=-3.8A,
di/dt= 100A/␮s
NOTES:
(*) Measured under pulsed conditions. Width ⱕ 300µs. Duty cycle ⱕ 2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
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ZXMP4A16K
Typical characteristics
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ZXMP4A16K
Typical characteristics
Current
regulator
QG
12V
VG
QGS
50k
0.2␮F
Same as
D.U.T
QGD
VDS
IG
D.U.T
ID
VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS
90%
RD
VGS
VDS
RG
VCC
10%
VGS
tr
td(off)
t(on)
tr
t(on)
Switching time waveforms
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
Pulse width ⬍ 1␮S
Duty factor 0.1%
td(on)
Switching time test circuit
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ZXMP4A16K
Intentionally left blank
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ZXMP4A16K
Package details - DPAK
Package dimensions
Dim.
A
A1
b
b2
b3
c
c2
D
D1
E
E1
Inches
Min.
Max.
0.086
0.094
0.005
0.020
0.035
0.030
0.045
0.205
0.215
0.018
0.024
0.018
0.023
0.213
0.245
0.205
0.250
0.265
0.170
-
Millimeters
Min.
Max.
2.18
2.39
0.127
0.508
0.89
0.762
1.14
5.21
5.46
0.457
0.61
0.457
0.584
5.41
6.22
5.21
6.35
6.73
4.32
-
Dim.
e
H
L
L1
L2
L3
L4
L5
⍜1°
⍜°
-
Inches
Min.
Max.
0.090 BSC
0.370
0.410
0.055
0.070
0.108 REF
0.020 BSC
0.035
0.065
0.025
0.040
0.045
0.060
0°
10°
0°
15°
-
Millimeters
Min.
Max.
2.29 BSC
9.40
10.41
1.40
1.78
2.74 REF
0.508 BSC
0.89
1.65
0.635
1.016
1.14
1.52
0°
10°
0°
15°
-
Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Zetex Inc
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
Zetex (Asia Ltd)
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
For international sales offices visit www.zetex.com/offices
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
8
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