DIODES ZXTN25012EFHTA

ZXTN25012EFH
12V, SOT23, NPN medium power transistor
Summary
BVCEO > 12V
BVECX > 6V
hFE > 500
IC(cont) = 6A
VCE(sat) < 32mV @ 1A
RCE(sat) = 23m⍀
PD = 1.25W
Description
C
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
B
Features
•
High power dissipation SOT23 package
•
High peak current
•
Very high gain
•
Low saturation voltage
•
6V reverse blocking voltage
E
E
Applications
•
MOSFET gate drivers
•
Power switches
•
Motor control
•
DC fans
•
DC-DC converters
C
B
Pinout - top view
Ordering information
Device
ZXTN25012EFHTA
Reel size
(inches)
Tape width
(mm)
Quantity per reel
7
8
3,000
Device marking
1C3
Issue 3 - March 2008
© Zetex Semiconductors plc 2008
1
www.zetex.com
ZXTN25012EFH
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
12
V
Emitter-collector voltage (reverse blocking)
VECX
6
V
Emitter-base voltage
VEBO
7
V
Continuous collector current(c)
IC
6
A
Base current
IB
1
A
Peak pulse current
ICM
15
A
Power dissipation at Tamb =25°C(a)
Linear derating factor
PD
0.73
5.84
W
mW/°C
Power dissipation at Tamb =25°C(b)
Linear derating factor
PD
1.05
8.4
W
mW/°C
Power dissipation at Tamb =25°C(c)
Linear derating factor
PD
1.25
9.6
W
mW/°C
Power dissipation at Tamb =25°C(d)
Linear derating factor
PD
1.81
14.5
W
mW/°C
Tj, Tstg
- 55 to 150
°C
Symbol
Limit
Unit
Junction to ambient(a)
R⍜JA
171
°C/W
Junction to ambient(b)
R⍜JA
119
°C/W
Junction to ambient(c)
R⍜JA
100
°C/W
Junction to ambient(d)
R⍜JA
69
°C/W
Operating and storage temperature range
Thermal resistance
Parameter
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Issue 3 - March 2008
© Zetex Semiconductors plc 2008
2
www.zetex.com
ZXTN25012EFH
Characteristics
Issue 3 - March 2008
© Zetex Semiconductors plc 2008
3
www.zetex.com
ZXTN25012EFH
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Collector-base breakdown
voltage
BVCBO
20
40
Max.
Unit Conditions
V
IC = 100␮A
Collector-emitter breakdown
voltage (base open)
BVCEO
12
17
V
IC = 10mA (*)
Emitter-base breakdown
voltage
BVEBO
7
8.3
V
IE = 100␮A
Emitter-collector breakdown
voltage (reverse blocking)
BVECX
6
8.0
V
IE = 100␮A, RBC < 1k⍀ or
0.25V > VBC > -0.25V
Emitter-collector breakdown
voltage (base open)
BVECO
4.5
5.5
V
IE = 100␮A,
Collector-base cut-off current ICBO
<1
50
0.5
nA
␮A
VCB = 20V
VCB = 20V, Tamb= 100°C
Emitter-base cut-off current
IEBO
<1
50
nA
VEB = 5.6V
Collector-emitter saturation
voltage
VCE(sat)
28
32
mV
IC = 1A, IB = 100mA(*)
45
55
mV
IC = 1A, IB = 10mA(*)
60
75
mV
IC = 2A, IB = 40mA(*)
160
190
mV
IC = 6A, IB = 120mA(*)
Base-emitter saturation
voltage
VBE(sat)
920
1000
mV
IC = 6A, IB = 120mA(*)
Base-emitter turn-on voltage
VBE(on)
800
900
mV
IC = 6A, VCE = 2V(*)
Static forward current
transfer ratio
hFE
500
800
1500
500
750
IC = 1A, VCE = 2V(*)
300
460
IC = 4A, VCE = 2V(*)
40
55
IC = 15A, VCE = 2V(*)
Transition frequency
fT
260
Output capacitance
COBO
25.6
Delay time
td
Rise time
IC = 10mA, VCE = 2V(*)
MHz IC = 50mA, VCE = 10V
f = 100MHz
pF
VCB = 10V, f = 1MHz(*)
70.9
ns
tr
69.8
ns
Storage time
ts
233
ns
VCC = 10V.
IC = 1A,
IB1 = IB2= 10mA.
Fall time
tf
71.6
ns
NOTES:
(*) Measured under pulsed conditions. Pulse width
Issue 3 - March 2008
© Zetex Semiconductors plc 2008
35
ⱕ300␮s; duty cycle ⱕ2%.
4
www.zetex.com
ZXTN25012EFH
Typical characteristics
Issue 3 - March 2008
© Zetex Semiconductors plc 2008
5
www.zetex.com
ZXTN25012EFH
Package outline - SOT23
E
e
e1
b
3 leads
L1
D
E1
A
A1
Dim.
L
c
Millimeters
Inches
Dim.
Millimeters
Min.
Max.
Min.
Max.
A
-
1.12
-
0.044
e1
A1
0.01
0.10
0.0004
0.004
E
2.10
2.64
0.083
0.104
b
0.30
0.50
0.012
0.020
E1
1.20
1.40
0.047
0.055
c
0.085
0.20
0.003
0.008
L
0.25
0.60
0.0098
0.0236
D
2.80
3.04
0.110
0.120
L1
0.45
0.62
0.018
0.024
-
-
-
-
-
e
0.95 NOM
Min.
0.037 NOM
Max.
Inches
1.90 NOM
Min.
Max.
0.075 NOM
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Kusterman-Park
D-81541 München
Germany
Zetex Inc
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
Zetex (Asia Ltd)
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Zetex Semiconductors plc
Zetex Technology Park, Chadderton
Oldham, OL9 9LL
United Kingdom
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Telephone: (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
For international sales offices visit www.zetex.com/offices
Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
Issue 3 - March 2008
© Zetex Semiconductors plc 2008
6
www.zetex.com