ISC 2SC1096

Inchange Semiconductor
Product Specification
2SC1096
Silicon NPN Power Transistors
DESCRIPTION
・With TO-202 package
・Low breakdown voltage
・High current
・High fT
APPLICATIONS
・For audio frequency power amplifier
and low speed switching applications
・Suitable for output stages of 3 to 5 watts
car radio sets and car stereo
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-202) and symbol
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
40
V
VCEO
Collector-emitter voltage
Open base
30
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
3
A
ICM
Collector current-peak
6
A
IB
Base current
0.6
A
PC
Collector power dissipation
Ta=25℃
1.2
TC=25℃
10
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC1096
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEsat
Collector-emitter saturation voltage
IC=3A ;IB=0.3A
2.0
V
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=0.3A
2.0
V
Collector-emitter breakdown voltage
IC=10mA; IB=0
ICBO
Collector cut-off current
VCB=30V;IE=0
1.0
μA
IEBO
Emitter cut-off current
VEB=3V; IC=0
1.0
μA
hFE-1
DC current gain
IC=20mA ; VCE=5V
20
hFE-2
DC current gain
IC=1.0A ; VCE=5V
40
COB
Output capacitance
IE=0; VCB=10V;f=1.0MHz
55
pF
fT
Transition frequency
IC=0.1A ; VCE=5V
65
MHz
V(BR)CEO
‹
hFE-1 classifications
N
M
L
K
40-60
50-100
80-160
120-250
2
30
V
250
Inchange Semiconductor
Product Specification
2SC1096
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3