Inchange Semiconductor Product Specification 2SA633 Silicon PNP Power Transistors DESCRIPTION ·With TO-202 package ·High current capability APPLICATIONS ·Power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-202) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -30 V VCEO Collector-emitter voltage Open base -30 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -2 A ICM Collector current-peak -3 A IB Base current -0.6 A PC Collector power dissipation 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ B TC=25℃ Inchange Semiconductor Product Specification 2SA633 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0 -30 V V(BR)EBO Emitter-base breakdown voltage IE=-0.1mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-1.5A ;IB=-0.15A -1.0 V VBEsat Base-emitter saturation voltage IC=-2A ;IB=-0.2 A -1.5 V ICBO Collector cut-off current VCB=-20V; IE=0 -1 μA ICEO Collector cut-off current VCE=-12V; IB=0 -100 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -1 μA hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE-2 DC current gain IC=-1A ; VCE=-5V 80 Transition frequency IC=-0.1A ; VCE=-5V fT CONDITIONS MIN TYP. B 2 MAX UNIT 250 60 MHz Inchange Semiconductor Product Specification 2SA633 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3