STL140N4LLF5 N-channel 40 V, 0.00275 Ω, 32 A, PowerFLAT™ (5x6) STripFET™ V Power MOSFET Preliminary data Features Type VDSS RDS(on) max ID STL140N4LLF5 40 V 0.00275 Ω 32 A (1) 1. The value is rated according Rthj-pcb. ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses PowerFLAT™ ( 5x6 ) Application ■ Switching applications Figure 1. Internal schematic diagram Description The STL140N4LLF5 is an N-channel STripFET™V Power MOSFET which has been designed to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM). Table 1. Device summary Order code Marking Package Packaging STL140N4LLF5 140N4LLF5 PowerFLAT™ (5x6) Tape and reel June 2010 Doc ID 17586 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/10 www.st.com 10 Contents STL140N4LLF5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2/10 .............................................. 6 Doc ID 17586 Rev 1 STL140N4LLF5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 40 V VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ± 22 V ID(1) Drain current (continuous) at TC = 25 °C 140 A ID (1) Drain current (continuous) at TC = 100 °C 88 A ID(2) Drain current (continuous) at TC = 25 °C 32 A (3) Drain current (continuous) at TC=100 °C 20 A (3) Drain current (pulsed) 128 A PTOT (1) Total dissipation at TC = 25 °C 80 W (2) Total dissipation at TC = 25 °C 4 W 0.03 W/°C -55 to 150 °C ID IDM PTOT Derating factor TJ Operating junction temperature Storage temperature Tstg 1. The value is rated according Rthj-c 2. The value is rated according Rthj-pcb 3. Pulse width limited by safe operating area Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case (drain) (steady state) 1.56 °C/W Thermal resistance junction-ambient 31.3 °C/W Value Unit Rthj-pcb (1) 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec Table 4. Symbol Avalanche data Parameter IAV Not-repetitive avalanche current, (pulse width limited by Tj Max) TBD A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAV , VDD = 24 V) TBD mJ Doc ID 17586 Rev 1 3/10 Electrical characteristics 2 STL140N4LLF5 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 250 µA, VGS= 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ±22 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 16 A Symbol Ciss Coss Crss Qg Parameter RG Gate input resistance Symbol td(on) tr td(off) tf Max. 40 Unit V VDS = Max rating @125 °C 1 10 µA µA ±100 nA 1 V 0.0021 0.00275 0.0024 0.0031 VGS= 4.5 V, ID= 16 A Test conditions Input capacitance Output capacitance Reverse transfer capacitance Qgd Table 7. Typ. Ω Ω Dynamic Total gate charge Gate-source charge Gate-drain charge Qgs Min. VDS = Max rating, IDSS Table 6. 4/10 On/off states VDS = 25 V, f=1 MHz, VGS=0 Min. Typ. Max. Unit - 5900 870 130 - pF pF pF - 45 TBD TBD - nC nC nC - TBD - Ω VDD=15 V, ID = 32 A VGS = 4.5 V (see Figure 3) f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV open drain Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. Typ. - TBD TBD TBD TBD VDD=15 V, ID= 16 A, RG=4.7 Ω, VGS=10 V (see Figure 2) Doc ID 17586 Rev 1 Max. Unit - ns ns ns ns STL140N4LLF5 Electrical characteristics Table 8. Symbol ISD Source drain diode Parameter Test conditions Min Typ. Max Unit Source-drain current - 18 A ISDM(1) Source-drain current (pulsed) - 72 A VSD(2) Forward on voltage ISD = 32 A, VGS=0 - 1.1 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 32 A, trr Qrr IRRM di/dt = 100 A/µs, VDD= 25 V - TBD TBD TBD ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Doc ID 17586 Rev 1 5/10 Test circuits STL140N4LLF5 3 Test circuits Figure 2. Switching times test circuit for resistive load Figure 4. Test circuit for inductive load Figure 5. switching and diode recovery times Unclamped inductive load test circuit Figure 6. Unclamped inductive waveform Switching time waveform 6/10 Figure 3. Figure 7. Doc ID 17586 Rev 1 Gate charge test circuit STL140N4LLF5 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 17586 Rev 1 7/10 Package mechanical data Table 9. STL140N4LLF5 Power FLAT™ (5x6) mechanical data mm. inch. Dim. Min. Typ. Max. Min. Typ. Max. 0.80 0.83 0.93 0.031 0.32 0.036 A1 0.02 0.05 0.0007 0.0019 A3 0.20 A b 0.35 0.47 0.013 0.015 D 5.00 0.196 D1 4.75 0.187 D2 4.15 4.20 4.25 0.163 0.165 E 6.00 0.236 E1 5.75 0.226 E2 3.43 3.48 3.53 E4 2.58 2.63 2.68 e L Figure 8. 8/10 0.40 0.007 0.135 1.27 0.70 0.80 0.018 0.167 0.137 0.139 0.103 0.105 0.050 0.90 Power FLAT™ (5x6) drawing Doc ID 17586 Rev 1 0.027 0.031 0.035 STL140N4LLF5 5 Revision history Revision history Table 10. Document revision history Date Revision 03-Jun-2010 1 Changes First release. Doc ID 17586 Rev 1 9/10 STL140N4LLF5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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