CXDM4060P SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CXDM4060P is a high current silicon P-Channel enhancement-mode MOSFET, designed for high speed pulsed amplifier and driver applications. This MOSFET features high current, low rDS(ON), low threshold voltage, and low gate charge. MARKING: FULL PART NUMBER SOT-89 CASE APPLICATIONS: • Load/Power switches • Power supply converter circuits • Battery powered portable equipment FEATURES: • Low rDS(ON) (48mΩ TYP @ VGS=10V) • High current (ID=6.0A) • Logic level compatibility MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VDS VGS ID IDM PD TJ, Tstg ΘJA ELECTRICAL CHARACTERISTICS: (TA=25°C unless SYMBOL TEST CONDITIONS IGSSF, IGSSR VGS=25V, VDS=0 IDSS VDS=40V, VGS=0 BVDSS VGS=0, ID=250μA VGS(th) VGS=VDS, ID=250μA VSD VGS=0, IS=2.0A rDS(ON) VGS=10V, ID=6.0A rDS(ON) VGS=4.5V, ID=4.0A Crss VDS=25V, VGS=0, f=1.0MHz Ciss VDS=25V, VGS=0, f=1.0MHz Coss VDS=25V, VGS=0, f=1.0MHz Qg(tot) VDS=32V, VGS=4.5V, ID=6.0A Qgs VDS=32V, VGS=4.5V, ID=6.0A Qgd VDS=32V, VGS=4.5V, ID=6.0A ton VDS=20V, VGS=10V, ID=1.0A toff RG=3.0Ω, RL=20Ω 40 25 6.0 20 1.2 -55 to +150 104 otherwise noted) MIN TYP 40 1.0 2.0 48 80 61 750 56 6.5 3.2 2.7 18 64 MAX 100 1.0 3.0 1.2 65 95 UNITS V V A A W °C °C/W UNITS nA μA V V V mΩ mΩ pF pF pF nC nC nC ns ns R1 (28-March 2013) CXDM4060P SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET SOT-89 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Gate 2) Drain 3) Source MARKING: FULL PART NUMBER R1 (28-March 2013) w w w. c e n t r a l s e m i . c o m CXDM4060P SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET TYPICAL ELECTRICAL CHARACTERISTICS R1 (28-March 2013) w w w. c e n t r a l s e m i . c o m