ERICSSON PTB20082

e
PTB 20082
15 Watts, 1.8–2.0 GHz
Cellular Radio RF Power Transistor
Description
The 20082 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts
output power, it may be used for both CW and PEP applications. Ion
implantation, nitride surface passivation and gold metallization ensure
excellent device reliability. 100% lot traceability is standard.
•
•
•
•
•
•
10 Watts Linear Power
Output Power at 1 dB Compressed = 15 W
Class AB Characteristics
30% Collector Efficiency at 7.5 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
Output Power (Watts)
20
16
200
82
12
LOT
8
VCC = 26 V
4
ICQ = 70 mA
f = 2.0 GHz
COD
E
0
0
1
2
3
4
Input Power (Watts)
Package 20209
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
VCER
50
Vdc
Collector-Base Voltage
VCBO
50
Vdc
Emitter-Base Voltage (collector open)
VEBO
4.0
Vdc
Collector Current (continuous)
IC
1.4
Adc
Total Device Dissipation at Tflange = 25°C
PD
Above 25°C derate by
52
Watts
0.29
W/°C
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
RθJC
3.4
°C/W
1
9/28/98
e
PTB 20082
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
IB = 0 A, IC = 5 mA, RBE = 22 Ω
V(BR)CER
50
—
—
Volts
Breakdown Voltage C to E
VBE = 0 V, IC = 5 mA
V(BR)CES
50
—
—
Volts
Breakdown Voltage E to B
IC = 0 A, IE = 5 mA
V(BR)EBO
4
5
—
Volts
DC Current Gain
VCE = 5 V, IC = 250 mA
hFE
20
—
—
—
Symbol
Min
Typ
Max
Units
Gpe
8
9
—
dB
P-1dB
15
—
—
Watts
ηC
30
—
—
%
Ψ
—
—
5:1
—
RF Specifications (100% Tested)
Characteristic
Gain
(VCC = 26 Vdc, POUT = 7.5 W, ICQ = 70 mA, f = 2.0 GHz)
Output Power at 1 dB Compression
(VCC = 26 Vdc, ICQ = 70 mA, f = 2.0 GHz)
Collector Efficiency
(VCC = 26 Vdc, POUT = 7.5 W, ICQ = 70 mA, f = 2.0 GHz)
Load Mismatch Tolerance
(VCC = 26 Vdc, POUT = 7.5 W, ICQ = 70 mA,
f = 2.0 GHz—all phase angles at frequency of test)
Typical Performance
POUT, Gain & Efficiency (at P-1dB) vs. Frequency
40
Efficiency (%)
VCC = 26 V
30
ICQ = 70 mA
Output Power (W)
6
5
1750
1800
1850
1900
1950
2000
20
POUT = 7.5 W
Efficiency (%)
12
40
30
Gain (dB)
-15
20
8
-25
10
10
2050
4
1900
Frequency (MHz)
Return Loss (dB)
1925
1950
1975
Frequency (MHz)
2
5/11/98
50
ICQ = 70 mA
16
Efficiency
8
60
VCC = 26 V
-35
0
2000
Return Loss
Gain
50
20
Gain
Gain (dB)
9
7
Broadband Test Fixture Performance
60
Output Power & Efficiency
10
e
PTB 20082
Intermodulation Distortion vs. Output Power
-20
18
-30
IMD (dBc)
Output Power (Watts)
Output Power vs. Supply Voltage
20
16
14
ICQ = 70 mA
f = 2.0 GHz
12
-40
VCC = 28 V
-50
ICQ = 40 mA
f1 = 1999.9 MHz
-60
f2 = 2000.0 MHz
10
-70
22
23
24
25
26
27
1
3
Supply Voltage (Volts)
5
7
9
11
13
15
Output Power (Watts-PEP)
Power Gain vs. Output Power
10
ICQ = 70 mA
Power Gain (dB)
9
8
ICQ = 35 mA
7
VCC = 26 V
f = 2.0 GHz
6
ICQ = 18 mA
5
0.1
1.0
10.0
100.0
Output Power (Watts)
Impedance Data
VCC = 26 Vdc, POUT = 7.5 W, ICQ = 70 mA
Z Source
Z Load
Z0 = 50 Ω
Frequency
Z Source
Z Load
GHz
R
jX
R
jX
1.75
5.8
-12.7
9.29
-0.6
1.80
5.8
-11.9
10.15
-0.9
1.85
5.8
-11.4
9.80
-1.3
1.90
5.8
-10.2
9.58
-1.5
1.95
6.0
-8.8
8.83
-1.5
2.00
7.1
-5.9
8.23
-1.3
2.05
7.7
-4.9
8.79
-0.7
3
5/6/98
e
PTB 20082
Typical Scattering Parameters
(VCE = 26 V, IC = 0.5 A)
f
(MHz)
S11
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
0.855
0.879
0.931
0.961
0.977
0.984
0.989
0.992
0.998
0.998
0.997
0.991
0.987
0.974
0.950
0.905
0.824
0.708
0.659
0.731
0.827
0.889
-176
-176
-176
-178
-179
180
178
177
176
175
173
172
170
168
165
163
160
163
173
-178
-178
-180
4.80
3.55
1.36
0.558
0.157
0.103
0.263
0.380
0.476
0.563
0.650
0.740
0.847
0.978
1.15
1.39
1.67
1.86
1.83
1.57
1.22
0.919
82
75
40
22
19
145
149
142
134
125
116
107
98
87
75
59
39
12
-17
-46
-69
-85
0.008
0.007
0.003
0.002
0.004
0.006
0.009
0.012
0.015
0.018
0.021
0.023
0.026
0.030
0.035
0.041
0.047
0.050
0.044
0.033
0.023
0.016
-24
-27
-29
31
78
84
81
76
72
66
60
54
50
44
35
24
7
-18
-45
-69
-91
-114
0.776
0.821
0.911
0.962
0.985
1.00
0.998
0.962
0.931
0.896
0.868
0.833
0.791
0.738
0.674
0.594
0.523
0.552
0.702
0.839
0.892
0.894
-172
-172
-174
-177
180
177
173
170
168
166
165
164
162
161
161
164
173
-172
-167
-171
-178
178
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
S21
S12
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
4
S22
Specifications subject to change without notice.
L1
© Ericsson Inc. Components AB 1995
EUS/KR 1301-PTB 20082 Uen Rev. D 09-28-98