e PTB 20190 175 Watts, 470–806 MHz Digital Television Power Transistor Description The 20190 is a class AB, NPN, common emitter RF power transistor intended for 28 Vdc operation across the 470 to 806 MHz UHF TV frequency band. Rated at 175 watts output power, it is specifically intended to operate uncorrected at 125 watts P-Sync (tested to EIA Standard 4.1.3, Section 5, Method B for class AB transmitters at 125 watts P-sync) or at a minimum of 175 watts in PEP applications. It may also be operated at comparable power levels for ATV broadcasting. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 175 Watts, 470–806 MHz Class AB Characteristics 50% Collector Efficiency at 175 Watts Gold Metallization Silicon Nitride Passivated Typical Gain vs. Frequency 10.5 10.0 Gain (dB) 9.5 201 90 LOT 9.0 8.5 VCC = 28 V 8.0 ICQ = 2 x 100 mA Pout = 175 W 7.5 470 526 582 638 694 750 COD E 806 Package 20224 Frequency (MHz) Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 25.0 Adc Total Device Dissipation at Tflange = 25°C PD Above 25°C derate by 330 Watts 1.89 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 0.53 °C/W 1 9/28/98 e PTB 20190 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 100 mA V(BR)CEO 25 30 — Volts Breakdown Voltage C to E VBE = 0 V, IC = 100 mA V(BR)CES 55 60 — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 3.5 5 — Volts DC Current Gain VCE = 5 V, IC = 1.0 A hFE 20 50 100 — Symbol Min Typ Max Units Gain (VCC = 28 Vdc, POUT = 50 W, ICQ = 2 x 100 mA, f = 800 MHz) Gpe 8.0 9.5 — dB Collector Efficiency (VCC = 28 Vdc, POUT = 125 W, ICQ = 2 x 100 mA, f = 800 MHz) ηC — 45 — % Intermodulation Distortion (Two Tone) (VCC = 28 Vdc, POUT = 125 W(PEP), ICQ = 2 x 100 mA, f = 800 MHz, ∆f = 1.0 MHz) IMD — 40 — dBc IM Product +/- 920 kHz — -52 — dB P-sync Ψ — — 3:1 — RF Specifications (100% Tested) Characteristic In-Channel Intermodulation Distortion (P-Sync = 125 W + Aural, EIA Std 4.1.3 Sect 5 Method B) Load Mismatch Tolerance (VCC = 28 Vdc, POUT = 125 W(PEP), ICQ = 2 x 100 mA, f = 800 MHz—all phase angles at frequency of test) Impedance Data VCC = 28 Vdc, POUT = 175 W, ICQ = 2 x 100 mA Z Source Frequency Z Load Z Source Z Load MHz R jX R jX 470 1.87 -4.1 2.42 1.74 630 0.76 -3.9 3.34 -1.49 800 2.12 -3.8 2.72 -3.36 2 5/11/98 Z0 = 50 Ω e PTB 20190 Typical Characteristics IMD vs. Frequency 2 Tone PEP (dB) -30 -35 -40 Pout = 125 W(PEP) VCC = 28 V -45 -50 470 525 580 635 690 745 800 Frequency (MHz) Test Circuit Block Diagram for f = 800 MHz Q1 l1, l2 l5, l6 l3, l4 l7, l8 l9, l10 l11, l12 l13, l14 l15, l16 l17, l18 T1, T2 PTB 20190 .0280 λ 800 MHz .0522 λ 800 MHz .0654 λ 800 MHz .0632 λ 800 MHz .0652 λ 800 MHz .0652 λ 800 MHz .0300 λ 800 MHz .0250 λ 800 MHz .0454 λ 800 MHz UT85-25 C1, C2 5.1 pF C3, C12, C8, C20 10 µF, 35 V SMT Capacitor C4, C7, C19, C16 0.1 µF C5, C6, C17, C18, C21, C22 75 pF C9, C10 0-10 pF C11 0-20 pF R1, R2 15 Ω, 1/4 W FB 4 mm. SMT Ferrite L1, L3 12 nh SMT Inductor L2, L4 68 nh SMT Inductor Circuit Board .031 G-200, Solid Copper Bottom NPN RF Transistor Microstrip 18.5 Ω Microstrip 18.5 Ω Microstrip 70 Ω Microstrip 10.2 Ω Microstrip 8 Ω Microstrip 9 Ω Microstrip 11.5 Ω Microstrip 60 Ω Microstrip 18.5 Ω Balun 3 5/11/98 e PTB 20190 Artwork (1 inch Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 ) 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 4 Specifications subject to change without notice. LF © 1996 Ericsson Inc. EUS/KR 1301-PTB 20190 Uen Rev. C 09-28-98