ERICSSON PTB20190

e
PTB 20190
175 Watts, 470–806 MHz
Digital Television Power Transistor
Description
The 20190 is a class AB, NPN, common emitter RF power transistor
intended for 28 Vdc operation across the 470 to 806 MHz UHF TV
frequency band. Rated at 175 watts output power, it is specifically
intended to operate uncorrected at 125 watts P-Sync (tested to EIA
Standard 4.1.3, Section 5, Method B for class AB transmitters at 125
watts P-sync) or at a minimum of 175 watts in PEP applications. It
may also be operated at comparable power levels for ATV broadcasting. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is
standard.
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•
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•
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175 Watts, 470–806 MHz
Class AB Characteristics
50% Collector Efficiency at 175 Watts
Gold Metallization
Silicon Nitride Passivated
Typical Gain vs. Frequency
10.5
10.0
Gain (dB)
9.5
201
90
LOT
9.0
8.5
VCC = 28 V
8.0
ICQ = 2 x 100 mA
Pout = 175 W
7.5
470
526
582
638
694
750
COD
E
806
Package 20224
Frequency (MHz)
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
VCER
40
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage (collector open)
VEBO
4.0
Vdc
Collector Current (continuous)
IC
25.0
Adc
Total Device Dissipation at Tflange = 25°C
PD
Above 25°C derate by
330
Watts
1.89
W/°C
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
RθJC
0.53
°C/W
1
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PTB 20190
Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
IB = 0 A, IC = 100 mA
V(BR)CEO
25
30
—
Volts
Breakdown Voltage C to E
VBE = 0 V, IC = 100 mA
V(BR)CES
55
60
—
Volts
Breakdown Voltage E to B
IC = 0 A, IE = 5 mA
V(BR)EBO
3.5
5
—
Volts
DC Current Gain
VCE = 5 V, IC = 1.0 A
hFE
20
50
100
—
Symbol
Min
Typ
Max
Units
Gain
(VCC = 28 Vdc, POUT = 50 W, ICQ = 2 x 100 mA, f = 800 MHz)
Gpe
8.0
9.5
—
dB
Collector Efficiency
(VCC = 28 Vdc, POUT = 125 W, ICQ = 2 x 100 mA, f = 800 MHz)
ηC
—
45
—
%
Intermodulation Distortion (Two Tone)
(VCC = 28 Vdc, POUT = 125 W(PEP), ICQ = 2 x 100 mA,
f = 800 MHz, ∆f = 1.0 MHz)
IMD
—
40
—
dBc
IM Product
+/- 920 kHz
—
-52
—
dB
P-sync
Ψ
—
—
3:1
—
RF Specifications (100% Tested)
Characteristic
In-Channel Intermodulation Distortion
(P-Sync = 125 W + Aural,
EIA Std 4.1.3 Sect 5 Method B)
Load Mismatch Tolerance
(VCC = 28 Vdc, POUT = 125 W(PEP), ICQ = 2 x 100 mA,
f = 800 MHz—all phase angles at frequency of test)
Impedance Data
VCC = 28 Vdc, POUT = 175 W, ICQ = 2 x 100 mA
Z Source
Frequency
Z Load
Z Source
Z Load
MHz
R
jX
R
jX
470
1.87
-4.1
2.42
1.74
630
0.76
-3.9
3.34
-1.49
800
2.12
-3.8
2.72
-3.36
2
5/11/98
Z0 = 50 Ω
e
PTB 20190
Typical Characteristics
IMD vs. Frequency
2 Tone PEP (dB)
-30
-35
-40
Pout = 125 W(PEP)
VCC = 28 V
-45
-50
470
525
580
635
690
745
800
Frequency (MHz)
Test Circuit
Block Diagram for f = 800 MHz
Q1
l1, l2
l5, l6
l3, l4
l7, l8
l9, l10
l11, l12
l13, l14
l15, l16
l17, l18
T1, T2
PTB 20190
.0280 λ 800 MHz
.0522 λ 800 MHz
.0654 λ 800 MHz
.0632 λ 800 MHz
.0652 λ 800 MHz
.0652 λ 800 MHz
.0300 λ 800 MHz
.0250 λ 800 MHz
.0454 λ 800 MHz
UT85-25
C1, C2
5.1 pF
C3, C12, C8, C20
10 µF, 35 V
SMT Capacitor
C4, C7, C19, C16
0.1 µF
C5, C6, C17, C18, C21, C22
75 pF
C9, C10
0-10 pF
C11
0-20 pF
R1, R2
15 Ω, 1/4 W
FB
4 mm.
SMT Ferrite
L1, L3
12 nh
SMT Inductor
L2, L4
68 nh
SMT Inductor
Circuit Board
.031 G-200, Solid Copper Bottom
NPN RF Transistor
Microstrip 18.5 Ω
Microstrip 18.5 Ω
Microstrip 70 Ω
Microstrip 10.2 Ω
Microstrip 8 Ω
Microstrip 9 Ω
Microstrip 11.5 Ω
Microstrip 60 Ω
Microstrip 18.5 Ω
Balun
3
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PTB 20190
Artwork (1 inch
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
)
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
4
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20190 Uen Rev. C 09-28-98