e PTB 20235 70 Watts, 2.1–2.2 GHz Wideband CDMA Power Transistor Description The 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP minimum output power, it is specifically intended for operation as a final stage in Wide CDMA systems. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 70 Watts, 2.1–2.2 GHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 120 100 80 202 60 LOT 40 VCC = 26 V 20 ICQ = 150 mA Total f = 2.2 GHz 35 COD E 0 0 4 8 12 16 20 Input Power (Watts) Package 20225 * Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCER 55 Vdc Collector-Base Voltage VCBO 55 Vdc Emitter-Base Voltage (collector open) VEBO 3.5 Vdc Collector Current (continuous) IC 12 Adc Total Device Dissipation at Tflange = 25°C PD 320 Watts 1.83 W/°C Above 25°C derate by Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RθJC 0.547 °C/W * This package not recommended for class A or CW operation. Two PTB 20245s recommended for CW operation. 1 9/28/98 e PTB 20235 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E VBE = 0 V, IC = 20 mA V(BR)CES 55 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 20 mA V(BR)EBO 3.5 4.0 — Volts DC Current Gain VCE = 10 V, IC = 1.5 A hFE 30 50 120 — Symbol Min Typ Max Units Gpe 7.5 8.0 — dB P-1dB 70 — — Watts ηC — 40 — % Ψ — — 5:1 — RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, POUT = 15 W, ICQ = 150 mA, f = 2.2 GHz) Gain Compression (VCC = 26 Vdc, ICQ = 150 mA, f = 2.2 GHz) Collector Efficiency (VCC = 26 Vdc, POUT = 70 W, ICQ = 150 mA, f = 2.2 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, POUT = 70 W(PEP), ICQ = 150 mA, f = 2.2 GHz —at all phase angles) Typical Performance POUT, Gain & Efficiency (at P-1dB) vs. Frequency 8 80 VCC = 26 V Gain (dB) 7 60 ICQ = 150 mA Total 6 40 Efficiency (%) 5 2050 2100 2150 2200 Efficiency (%) 40 6 VCC = 26 V 30 ICQ = 150 mA Total 4 -5 20 POUT = 70 W 2 20 2250 0 2100 Frequency (MHz) -15 10 Return Loss (dB) 2120 2140 2160 Frequency (MHz) 2 9/10/97 50 8 Efficiency 100 60 Gain (dB) 2180 -25 0 2200 Return Loss Gain 9 Broadband Test Fixture Performance 10 Gain Output Power (W) 120 Output Power & Efficiency 10 e PTB 20235 Output Power vs. Supply Voltage Power Gain vs. Output Power 10 ICQ = 150 mA Total 100 Power Gain (dB) Output Power (Watts) 110 90 80 ICQ = 150 mA Total f = 2.2 GHz 70 60 ICQ = 75 mA Total 9 8 7 VCC = 26 V f = 2.2 GHz ICQ = 38 mA Total 6 22 23 24 25 26 27 1 10 Supply Voltage (Volts) Output Power (Watts) Intermodulation Distortion vs. Output Power -20 IMD (dBc) VCC = 26 V -25 ICQ = 150 mA -30 f1 = 2.200 GHz f2 = 2.199 GHz -35 -40 -45 -50 10 20 30 40 50 60 70 80 Output Power (Watts-PEP) Impedance Data VCC = 26 Vdc, POUT = 70 W, ICQ = 150 mA Z Source Frequency Z Load Z Source Z Load GHz R jX R jX 2.05 6.18 -6.7 6.4 -5.8 2.10 7.58 -6.9 5.9 -5.0 2.15 8.76 -6.2 5.5 -4.1 2.20 9.16 -4.8 5.0 -3.0 2.25 7.96 -3.6 4.8 -2.6 3 8/19/97 100 e PTB 20235 Test Circuit Q1 Block Diagram for f = 2 GHz Q1 l1, l2, l21, l22 l3, l4 l5, l6 l7, l8, l11, l12 l9, l10 l13, l14 l15, l16 l17, l18 l19, l20 L1, L2 L3, L4 L5, L6 C1, C2 C3-8, C17, C18 C9, C11, C13, C15 C10, C12, C14, C16 R1, R2 T1, T2 Board PTB 20235 NPN RF Transistor 0.25λ 2GHz Microstrip 50 Ω 0.085λ 2GHz Microstrip 80 Ω 0.067λ 2GHz Microstrip 20 Ω 0.0217λ 2GHz Microstrip 11.7 Ω 0.053λ 2GHz Microstrip 8.15 Ω 0.055λ 2GHz Microstrip 6.7 Ω 0.052λ 2GHz Microstrip 11.45 Ω 0.060λ 2GHz Microstrip 16.9 Ω 0.160λ 2GHz Microstrip 75 Ω Placement Diagram (not to scale) 4 9/10/97 6.8 nh SMT Inductor 56 nh SMT Inductor 4 mm. SMT Ferrite 0–4 pF Johanson Piston Trimmer 20 pF (B ATC 100) 0.1 µF 1206 10 µF SMT Tantalum 10 Ω SMT UT 70-50 0.031” G200, Solid Copper Bottom, AlliedSignal e Artwork (1 inch Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 PTB 20235 ) 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 5 9/28/98 Specifications subject to change without notice. L3 © 1997 Ericsson Inc. EUS/KR 1301-PTB 20235 Uen Rev. B 09-28-98