ERICSSON PTB20177

e
PTB 20177
150 Watts, 925–960 MHz
Cellular Radio RF Power Transistor
Description
The 20177 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 925 to 960 MHz. Rated at 150
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
•
•
•
•
26 Volt, 960 MHz Characteristics
- Output Power = 150 Watts (PEP)
- Collector Efficiency = 50 Min at 150 Watts
- IMD = -28 dBc Max at 150 Watts (PEP)
Class AB Characteristics
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
Output Power (Watts)
200
160
201
77
120
LOT
COD
E
80
VCC = 26 V
40
ICQ = 400 mA Total
f = 960 MHz
0
0
5
10
15
20
25
30
Input Power (Watts)
Package 20224
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
VCER
40
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage (collector open)
VEBO
4.0
Vdc
Collector Current (continuous)
IC
25.0
Adc
Total Device Dissipation at Tflange = 25°C
PD
330
Watts
1.89
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
RθJC
0.53
°C/W
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Electrical Characteristics
(100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
IB = 0 A, IC = 100 mA
V(BR)CEO
25
30
—
Volts
Breakdown Voltage C to E
VBE = 0 V, IC = 100 mA
V(BR)CES
55
70
—
Volts
Breakdown Voltage E to B
IC = 0 A, IE = 5 mA
V(BR)EBO
3.5
5
—
Volts
DC Current Gain
VCE = 5 V, IC = 1 A
hFE
20
50
100
—
Symbol
Min
Typ
Max
Units
Gain
(VCC = 26 Vdc, Pout = 150 W, ICQ = 400 mA Total,
f = 960 MHz)
Gpe
7.5
8.5
—
dB
Gain at PEP
(VCC = 26 Vdc, Pout = 150 W(PEP), ICQ = 400 mA Total,
f = 960 MHz)
Gpe
8
9
—
dB
Collector Efficiency
(VCC = 26 Vdc, Pout = 150 W, ICQ = 400 mA Total,
f = 960 MHz)
ηC
50
—
—
%
Collector Efficiency at PEP
(VCC = 26 Vdc, Pout = 150 W(PEP), ICQ = 400 mA Total,
f = 960 MHz)
ηC
35
—
—
%
IMD
—
-30
-28
dBc
Ψ
—
—
5:1
—
RF Specifications (100% Tested)
Characteristic
Intermodulation Distortion
(VCC = 26 Vdc, Pout = 150 W(PEP), ICQ = 400 mA Total,
f1 = 959.9 MHz, f2 = 960.0 MHz)
Load Mismatch Tolerance
(VCC = 26 Vdc, Pout = 150 W(PEP), ICQ = 400 mA Total,
f = 960 MHz—all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(VCC = 26 Vdc, Pout = 150 W, ICQ = 400 mA Total )
Z Source
Frequency
Z Load
Z Source
Z Load
MHz
R
jX
R
jX
925
4.3
-3.6
3.8
-1.8
940
4.1
-3.6
3.5
-1.4
960
3.7
-3.4
3.1
-0.9
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PTB 20177
Typical Performance
Output Power vs. Supply Voltage
Gain vs. Frequency
(as measured in a broadband circuit)
11
170
VCC = 26 V
160
ICQ = 400 mA Total
Pout = 150 W
10
150
Gain (dB)
Output Power (Watts)
180
140
130
ICQ = 400 mA Total
Pin = 20 W
f = 960 MHz
120
110
8
7
925
100
17
19
21
23
25
9
27
930
935
Vcc, Supply Voltage
940
945
950
955
960
Frequency (MHz)
Efficiency vs. Output Power
Intermodulation Distortion vs. Power Output
60
-20
50
-24
IMD (dBc)
Efficiency (%)
VCC = 26 V
40
30
20
VCC = 26 V
10
ICQ = 400 mA Total
f = 960 MHz
ICQ = 400 mA Total
f1 = 959.90 MHz
-28
f2 = 960.00 MHz
-32
-36
-40
0
70
85
100
115
130
145
60
160
Output Power (Watts)
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
80
90
100
110
120
130
140
150
Output Power (Watts-PEP)
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
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Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB 20177 Uen Rev. C 09-28-98