PTF 10015 50 Watts, 300–960 MHz GOLDMOS™ Field Effect Transistor Description Features The PTF 10015 is a 50 Watt LDMOS FET intended for large signal amplifier applications from 300 to 960 MHz. It operates at 55% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization are used to ensure excellent device lifetime and reliability. • Performance at 960 MHz, 28 Volts - Output Power = 50 Watts - Power Gain = 13.0 dB Typ, 12.0 dB Min - Efficiency = 55% Typ • Full Gold Metallization • Silicon Nitride Passivated • Excellent Thermal Stability • Back Side Common Source • 100% lot traceability • Available in Package 20222 as PTF 10031 70 90 60 80 Output Pow er (W) 50 70 Efficiency (%) 40 60 30 50 VDD = 28 V IDQ = 380 mA f = 960 MHz 20 10 40 2 3 1003 1 3456 9743 Package 20222 20 1 Package 20235 A-12 30 0 0 100 15 A-1 234 569 914 Drain Efficiency Output Power Typical Power Out & Efficiency vs. Power In 4 Input Power (Watts) Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation PD 175 Watts 1.0 W/°C Above 25°C derate by Storage Temperature Range TSTG -65 to +150 °C Thermal Resistance (TC = 70°C) RqJC 1.0 °C/W All published data is at TC = 25°C unless otherwise indicated. e 1 e PTF 10015 Electrical Characteristics Characteristic (100% Tested) Conditions Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Symbol Min Typ Max Units V(BR)DSS 65 — — Volts Drain-Source Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 mA Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) 3.0 — 5.0 Volts Forward Transconductance VDS = 10 V, ID = 3 A gfs 2.0 2.8 — Siemens Symbol Min Typ Max Units Gps 12.0 13.0 — dB P-1dB 50 — — Watts h 50 55 — % Y — — 10:1 — RF Specifications (100% Tested) Characteristic Common Source Power Gain (VDD = 28 V, POUT = 50 W, IDQ = 380 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 380 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 50 W, IDQ = 380 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 50 W, IDQ = 380 mA, f = 960 MHz— all phase angles at frequency of test) Typical Performance Intermodulation Distortion vs. Power Output Gain vs. Power Output -15 16 VDD = 28 V 15 IMD (dB) Gain (dB) -25 14 13 12 VDD = 28 V 11 IDQ = 380 mA f = 960 MHz 10 20 f1 = 950.000 MHz f2 = 950.100 MHz -35 5th -45 7th 10 0 3rd IDQ = 380 mA 30 40 50 60 -55 70 0 Power Output (Watts) 10 20 30 40 50 Output Power (Watts PEP) 2 60 70 e PTF 10015 Output Power vs. Supply Voltage Broadband Gain vs. Frequency 60 55 14 Gain (dB) Output Power (Watts) 15 50 IDQ = 380 mA f = 960 MHz 45 13 VDD = 28 V IDQ = 380 mA POUT = 50 W 12 11 925 40 22 24 26 28 30 32 930 34 16 1.02 14 1.01 100 12 80 10 60 8 Cds 40 6 20 Crss 0 0 10 20 Bias Voltage (V) Cgs 120 18 1.03 Crss (pF) Cds & Cgs (pF) 140 30 945 950 955 960 Bias Voltage vs. Temperature Capacitance vs. Supply Voltage VGS = 0 V f = 1 MHz 940 Frequency (MHz) Drain-Source Voltage (Volts) 160 935 Voltage normalized to 1.0 V Series show current (A) 1.00 0.43 0.99 1.25 0.98 2.08 2.9 0.97 4 0.96 2 0.95 40 3.71 4.53 -20 Supply Voltage (Volts) 30 80 130 Temp. (°C) Impedance Data (circuit optimized at 960 MHz) Z0 = 50 W VDD = 28 V, POUT = 50 W, IDQ = 380 mA D Z Source Z Load G S Z Source W Frequency Z Load W MHz R jX R jX 850 1.38 -1.22 2.50 1.00 900 1.20 -0.44 2.45 1.65 950 1.08 +0.67 2.40 2.33 1000 0.96 +1.30 2.40 2.90 3 e PTF 10015 Typical Scattering Parameters (VDS = 28 V, ID = 1.0 A) f (MHz) Mag S11 Ang Mag S21 Ang Mag S12 Ang Mag Ang 40 60 0.883 0.878 -153 -160 33.0 21.8 93 85 0.014 0.013 3 1 0.527 0.533 -143 -148 80 100 0.876 0.884 -163 -164 16.1 12.8 80 76 0.012 0.012 -6 -13 0.553 0.574 -150 -148 150 200 0.904 0.915 -165 -165 8.21 5.67 65 58 0.011 0.010 -18 -23 0.638 0.694 -148 -149 250 300 0.934 0.947 -164 -164 4.36 3.41 51 45 0.010 0.010 -31 -31 0.769 0.792 -148 -149 350 400 0.962 0.975 -163 -163 2.78 2.30 41 36 0.008 0.008 -28 -33 0.837 0.873 -150 -151 450 500 0.974 0.977 -163 -163 1.90 1.65 33 30 0.006 0.006 -36 -52 0.874 0.912 -151 -152 550 600 0.979 0.985 -164 -164 1.44 1.28 27 26 0.005 0.004 -46 -53 0.916 0.925 -154 -154 650 700 0.981 0.980 -165 -166 1.14 1.01 22 21 0.003 0.004 -27 -18 0.933 0.933 -156 -157 750 800 0.975 0.973 -167 -168 0.924 0.809 19 16 0.003 0.001 -13 14 0.936 0.946 -158 -160 850 900 0.972 0.969 -170 -171 0.749 0.656 14 12 0.003 0.003 -1 30 0.939 0.946 -160 -162 950 1000 0.966 0.969 -173 -174 0.609 0.564 14 8 0.002 0.003 53 59 0.948 0.945 -164 -164 1050 1100 0.969 0.970 -176 -177 0.526 0.450 3 6 0.004 0.004 56 69 0.949 0.955 -167 -167 1150 1200 0.970 0.970 -178 -179 0.405 0.383 1 4 0.005 0.005 57 65 0.953 0.952 -168 -169 1250 1300 0.971 0.971 180 179 0.351 0.330 -5 -5 0.005 0.005 56 61 0.959 0.957 -170 -170 1350 1400 0.973 0.973 179 179 0.308 0.255 -5 -3 0.005 0.006 52 59 0.963 0.965 -171 -171 1450 1500 0.972 0.965 179 179 0.219 0.210 5 -8 0.006 0.006 58 62 0.965 0.957 -171 -172 4 S22 e PTF 10015 Test Circuit Test Circuit Schematic for f = 960 MHz DUT l1 l2 l3 l4 l5 l6 C1, C5 C2, C4, C6, C9 C3 C7 C8 L1 R1, R2, R3 Circuit Board PTF 10015 .140 l 960 MHz Microstrip 50 W .270 l 960 MHz Microstrip 50 W .185 l 960 MHz Microstrip 6.2 W .225 l 960 MHz Microstrip 11.0 W .040 l 960 MHz Microstrip 50 W .330 l 960 MHz Microstrip 50 W 0.3-3.5 pF, Variable Capacitor, Johanson 36 pF, Capacitor ATC 100 B 0.01 mF, Capacitor ATC 10,000 B 0.1 mF, 50 V, Capacitor Digi-Key P4917-ND 100 mF, 50 V, Electrolytic Capacitor, Digi-Key P5276 4 Turn, #20 AWG, .120” I.D. 220 W, 1/4 W Resistor .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper Placement Diagram (not to scale) 5 e PTF 10015 Test Circuit Artwork (1 inch ) Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 6 Specifications subject to change without notice. LF © 1997 Ericsson Inc. EUS/KR 1301-PTF 10015 Uen Rev. A 04-01-99