NEC 2SK1958

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1958
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK1958 is an N-channel vertical MOS FET. Because
PACKAGE DIMENSIONS (in mm)
it can be driven by a voltage as low as 1.5 V and it is not
2.1 ±0.1
necessary to consider a drive current, this FET is ideal as an
1.25 ±0.1
actuator for low-current portable systems such as headphone
• Because of its high input impedance, there’s no need to
D
S
+0.1
• Gate can be driven by 1.5 V
G
0.3 –0
FEATURES
2.0 ±0.2
+0.1
0.3 –0
0.65 0.65
stereos and video cameras.
consider drive current
Marking
0.15 –0.05
0 to 0.1
+0.1
0.9 ±0.1
components required can be reduced
0.3
• Since bias resistance can be omitted, the number of
Marking: G21
EQUIVALENT CURCUIT
Drain (D)
Internal
diode
Gate (G)
PIN CONNECTIONS
Gate
protection
diode
Source (S)
S: Source
D: Drain
G: Gate
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
SYMBOL
TEST CONDITIONS
RATING
UNIT
Drain to Source Voltage
VDSS
VGS = 0
16
V
Gate to Source Voltage
VGSS
VDS = 0
±7.0
V
Drain Current (DC)
ID(DC)
±0.1
A
Drain Current (Pulse)
ID(pulse)
±0.2
A
PW ≤ 10 ms, duty cycle ≤ 50 %
Total Power Dissipation
PT
150
mW
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg
–55 to +150
˚C
Document No. D11221EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1996
2SK1958
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-Off Current
IDSS
VDS = 16 V, VGS = 0
1.0
µA
Gate Leakage Current
IGSS
VGS = ±7.0 V, VDS = 0
±3.0
µA
Gate Cut-Off Voltage
VGS(off)
VDS = 3 V, ID = 10 µA
0.5
1.1
V
|yfs|
VDS = 3 V, ID = 10 mA
20
Drain to Source On-State Resistance
RDS(on)1
VGS = 1.5 V, ID = 1 mA
20
50
Ω
Drain to Source On-State Resistance
RDS(on)2
VGS = 2.5 V, ID = 10 mA
7
15
Ω
Drain to Source On-State Resistance
RDS(on)3
VGS = 4.0 V, ID = 10 mA
5
12
Ω
VDS = 3 V, VGS = 0, f = 1.0 MHz
10
pF
Forward Transfer Admittance
0.8
mS
Input Capacitance
Ciss
Output Capacitance
Coss
13
pF
Reverse Transfer Capacitance
Crss
3
pF
Turn-ON Delay Time
td(on)
VDD = 3 V, ID = 10 mA, VGS(on) = 3 V,
15
ns
RG = 10 Ω, RL = 300 Ω
70
ns
td(off)
100
ns
tf
110
ns
Rise Time
Turn-OFF Delay Time
Fall Time
2
SYMBOL
tr
2SK1958
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
50
100
40
80
ID - Drain Current - mA
dT- Derating Factor - %
2.0 V
60
40
20
1.8 V
30
20
1.6 V
10
1.4 V
VGS = 1.2 V
150
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
|yfs| - Forward Transfer Admittance - mS
500
VDS = 3 V
200
TA = –25 ˚C
25 ˚C
75 ˚C
100
50
20
10
10
RDS(on) - Drain to Source On-State Resistance - Ω
5
20
50
100
ID - Drain Current - mA
200
200
TA = 25 ˚C
100
50
VGS = 1.5 V
10
2.5 V
4V
5
0.5
1
2
5
10
20
50 100 200
ID - Drain Current - mA
1
2
3
4
VDS - Drain to Source Voltage - V
5
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
200
TA = –25 ˚C
100
50
VGS = 1.5 V
20
10
2.5 V
5
4.0 V
0.5
1
2
5
10
20
50 100 200
500
ID - Drain Current - mA
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
20
0
RDS(on) - Drain to Source On-State Resistance - Ω
60
90
120
30
TA - Ambient Temperature - ˚C
500
RDS(on) - Drain to Source On-State Resistance - Ω
0
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
200
TA = 75 ˚C
100
50
20
VGS = 1.5 V
10
2.5 V
4.0 V
5
0.5
1
2
5
10
20
50 100 200
500
ID - Drain Current - mA
3
30
TA = – 25˚C
ID = 10 mA
20
1 mA
10
1
5
6
2
3
4
VGS - Gate to Source Voltage - V
0
7
RDS(on) - Drain to Source On-State Resistance - Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TOSOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
TA = 25 ˚C
ID = 10 mA
20
1 mA
10
5
6
2
3
4
1
VGS - Gate to Source Voltage - V
0
200
30
TA = 75 ˚C
20
ID = 10 mA
1 mA
10
100
50
20
10
5
2
1
0
5
6
2
3
4
1
VGS - Gate to Source Voltage - V
7
0
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Crss, Coss, - Capacitance - pF
500
VGS = 0
f = 1 MHz
20
10
Ciss
Coss
5
2
1
0.5
Crss
20
1
2
5
10
VDS - Drain to Source Voltage - V
0.2
0.4
0.6
0.8
VSD - Source to Drain Voltage - V
1.0
SWITCHING CHARACTERISTICS
50
4
7
SOURCE TO DRAIN DIODE FORWARD
VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
ISD - Diode Forward Current - mA
RDS(on) - Drain to Source On-State Resistance - Ω
RDS(on) - Drain to Source On-State Resistance - Ω
2SK1958
50
VDD = 3 V
VGS(on) = 3 V
tr
200
100
tf
50
td(on)
20
10
td(off)
20
50
100
200
ID - Drain Current - mA
500
2SK1958
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
TEI-1202
Quality grade on NEC semiconductor devices
IEI-1209
Semiconductor device mounting technology manual
C10535E
Guide to quality assurance for semiconductor devices
MEI-1202
Semiconductor selection guide
X10679E
5
2SK1958
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11