DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2053 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2053 is an N-channel vertical MOS FET. Because PACKAGE DIMENSIONS (in mm) it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an 5.7 ±0.1 actuator for low-current portable systems such as headphone 2.0 ±0.2 1.5 ±0.1 S 1.0 power types • Gate can be driven by 1.5 V D 0.85 ±0.1 0.5 ±0.1 • Low ON resistance G 3.65 ±0.1 • New package intermediate between small signal and 0.55 FEATURES 5.4 ±0.25 stereos and video cameras. 0.5 ±0.1 0.4 ±0.05 2.1 RDS(on) = 0.40 Ω MAX. @ VGS = 1.5 V, ID = 1.0 A 4.2 Marking: NA1 RDS(on) = 0.12 Ω MAX. @ VGS = 4.0 V, ID = 2.5 A EQUIVALENT CURCUIT Drain (D) PIN CONNECTIONS Internal S: Source D: Drain diode G: Gate Gate (G) Gate protection diode Source (S) ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER SYMBOL TEST CONDITIONS RATING UNIT Drain to Source Voltage VDSS VGS = 0 16 V Gate to Source Voltage VGSS VDS = 0 ±7.0 V Drain Current (DC) ID(DC) ±5.0 A Drain Current (Pulse) ID(pulse) ±10.0 A 2.0 W PW ≤ 10 ms, duty cycle ≤ 50 % × 0.7 mm ceramic substrate used Total Power Dissipation PT Channel Temperature Tch 150 ˚C Operating Temperature Topt –20 to +60 ˚C Storage Temperature Tstg –55 to +150 ˚C Document No. D11224EJ2V0DS00 (2nd edition) Date Published June 1996 P Printed in Japan 7.5 cm2 © 1996 2SK2053 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Cut-Off Current IDSS VDS = 16 V, VGS = 0 1.0 µA Gate Leakage Current IGSS VGS = ±7.0 V, VDS = 0 ±3.0 µA Gate Cut-Off Voltage VGS(off) VDS = 3 V, ID = 1 mA 0.5 1.1 V |yfs| VDS = 3 V, ID = 2.5 A 4 Forward Transfer Admittance 0.8 S Drain to Source On-State Resistance RDS(on)1 VGS = 1.5 V, ID = 0.5 A 0.19 0.40 Ω Drain to Source On-State Resistance RDS(on)2 VGS = 2.5 V, ID = 2.5 A 0.08 0.15 Ω Drain to Source On-State Resistance RDS(on)3 VGS = 4.0 V, ID = 2.5 A 0.06 0.12 Ω VDS = 3 V, VGS = 0, f = 1.0 MHz 730 pF Input Capacitance Ciss Output Capacitance Coss 640 pF Reverse Transfer Capacitance Crss 230 pF Turn-ON Delay Time td(on) VDD = 3 V, ID = 2.5 A, VGS(on) = 3 V, 85 ns RG = 10 Ω, RL = 1.2 Ω 450 ns td(off) 280 ns tf 310 ns Rise Time Turn-OFF Delay Time Fall Time 2 SYMBOL tr 2SK2053 TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA 100 10 m 1 = PW ms 2 s ID - Drain Current - A s m 40 0 60 10 dT - Derating Factor - % 10 5 80 1 DC 0.5 20 0.2 Single pulse 0.1 0 30 60 90 120 TA - Ambient Temperature - ˚C 150 1 2 5 10 20 50 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 4.0 V 3.0 V 2.5 V 5 2.0 100 TRANSFER CHARACTERISTICS 10 V VDS = 3 V 1.8 V ID - Drain Current - A ID - Drain Current - A 4 3 2 VGS = 1.5 V 1 TA = 75 ˚C 0.1 25 ˚C –25˚C 0.01 1 0 0.2 0.4 0.6 0.8 VDS - Drain to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - Ω FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT |yfs| - Forward Transfer Admittance - S 10 VDS = 3 V 3 1 TA = –25 ˚C 25 ˚C 75 ˚C 0.3 0.1 0.03 0.01 0.001 0.003 0.01 0.03 0.1 ID - Drain Current - A 0.3 0.001 1.0 1 0 0.5 1 1.5 2 VGS - Gate to Source Voltage - V 2.5 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0.7 VGS = 1.5 V 0.6 0.5 0.4 0.3 0.2 0.1 0 0.01 TA = 75 ˚C 25 ˚C 0.03 –25 ˚C 0.1 0.3 1 ID - Drain Current - A 3 10 3 0.7 VGS = 2.5 V 0.6 0.5 0.4 0.3 TA = 75 ˚C 25 ˚C –25 ˚C 0.2 0.1 0 0.01 0.03 0.1 0.3 1 ID - Drain Current - A 3 RDS(on) - Drain to Source On-State Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 10 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 0.7 VGS = 4.0 V 0.6 0.5 0.4 0.3 0.1 0 0.01 0.4 ID = 1 A, 2.5 A 0.3 5A 0.2 0.1 2 4 VGS - Gate to Source Voltage - V 3 10 0.4 0.6 0.8 1.0 VSD - Source to Drain Voltage - V 1.2 1 0.1 0.01 0.001 0.2 6 SWITCHING CHARACTERISTICS 1 000 td(on), tr, td(off), tf - Switching Time - ns 1 000 Ciss 500 Coss 200 100 Crss 50 20 10 0.1 0.3 1 ID - Drain Current - A 10 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Crss, Coss - Capacitance - pF 0.03 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 0.5 0 4 TA = 75 ˚C 25 ˚C –25 ˚C 0.2 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE ISD - Diode Forward Current - A RDS(on) - Drain to Source On-State Resistance - Ω RDS(on) - Drain to Source On-State Resistance - Ω 2SK2053 VGS = 0 f = 1 MHz 1 2 5 10 20 50 VDS - Drain to Source Voltage - V 100 tr 500 tf td(off) 200 100 td(on) 50 20 10 0.1 VDD = 3 V VGS(on) = 3 V 0.2 0.5 1 2 ID - Drain Current - A 5 10 2SK2053 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual C10535E Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E 5 2SK2053 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11