DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1824 N-CHANNEL MOS FET FOR SWITCHING The 2SK1824 is a N-channel vertical type MOS FET that is PACKAGE DIMENSIONS (in mm) driven at 2.5 V. 0.1 +0.1 –0.05 0.3 ± 0.05 Because this MOS FET can be driven on a low voltage and because it is not necessary to consider the drive current, the Moreover, the 2SK1824 is housed in a super small mini-mold package so that it can help increase the mounting density on the D 0.8 ± 0.1 such as VCR cameras and headphone stereo systems. 1.6 ± 0.1 2SK1824 is ideal for driving the actuator of power-saving systems, 0 to 0.1 S G printed circuit board and lower the mounting cost, contributing to 0.2 +0.1 –0 miniaturization of the application systems. 0.5 0.6 0.5 0.75 ± 0.05 1.0 1.6 ± 0.1 FEATURES • Small mounting area: about 60 % of the conventional mini-mold package (SC-70) EQUIVALENT CIRCUIT • Can be automatically mounted • Can be directly driven by 3-V IC Drain (D) The internal diode in the right figure is a parasitic diode. The protection diode is to protect the product from damage due to static electricity. If there is a danger that an extremely high voltage will be applied across the gate and source in the actual circuit, a gate protection circuit such as an external Gate (G) Internal diode Gate protection diode constant-voltage diode is necessary. Source (S) PIN CONNECTIONS S: Source D: Drain G: Gate Marking: B1 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER SYMBOL TEST CONDITIONS RATING UNIT Drain to Source Voltage VDSS VGS = 0 30 V Gate to Source Voltage VGSS VDS = 0 ±7 V Drain Current (DC) ID(DC) ±100 mA Drain Current (Pulse) ID(pulse) PW ≤ 10 ms Duty cycle ≤ 50 % ±200 mA Total Power Dissipation PT 3.0 cm2 × 0.64 mm, ceramic substrate used 200 mW Channel Temperature Tch 150 ˚C Operating Temperature Topt –55 to +80 ˚C Storage Temperature Tstg –55 to +150 ˚C Document No. D11220EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan 1996 2SK1824 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT 1.0 µA ±0.1 ±3 µA 1.5 V Drain Cut-Off Current IDSS VDS = 30 V, VGS = 0 Gate Leakage Current IGSS VGS = ±5 V, VDS = 0 Gate Cut-Off Voltage VGS(off) VDS = 3 V, ID = 10 µA 0.8 1.0 Forward Transfer Admittance |yfs| VDS = 3 V, ID = 10 mA 20 50 Drain to Source On-State Resistance RDS(on)1 VGS = 2.5 V, ID = 1 mA 7 13 Ω Drain to Source On-State Resistance RDS(on)2 VGS = 4.0 V, ID = 10 mA 5 8 Ω Input Capacitance Ciss VDS = 5.0 V, VGS = 0, f = 1 MHz 16 pF Output Capacitance Coss 14 pF Reverse Transfer Capacitance Crss 2 pF Turn-On Delay Time td(on) VDD = 5V, ID = 10 mA 15 ns tr VGS(on) = 5 V, RG = 10 Ω 20 ns Turn-Off Delay Time td(off) RL = 500 Ω 100 ns Fall Time tf 100 ns Rise Time mS SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS (Resistive Load) RL DUT Gate Voltage Waveform VGS 0 90 % VGS(on) 10 % VDD RG 90 % ID 90 % PG. ID Drain Current Waveform Vin 0 10 % 10 % tr td(on) τ τ = 1 µs Duty cycle ≤ 1 % 2 0 ton tf td(off) toff 2SK1824 TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 100 PT - Power Dissipation - mW dT - Derating Factor - % 240 80 60 40 20 0 20 40 60 80 100 120 3.0 cm2 × 0.64 mm Using ceramic substrate 200 160 120 80 40 0 140 160 30 ID - Drain Current - mA |yfs| - Forward Transfer Admittance - mS VDS = 3 V Pulsed 10 TA = –25 ˚C 150 ˚C 1.0 2.5 ˚C 0.1 7.5 ˚C 0.01 0.001 0.5 1.0 1.5 2.0 2.5 3.0 100 75 ˚C 50 150 ˚C 20 10 5 1.0 9 ID = 0.1 A 7 ID = 10 mA 3 4 5 6 VGS - Gate to Source Voltage - V 30 10 100 200 7 8 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-State Resistance - Ω RDS(on) - Drain to Source On-State Resistance - Ω 11 2 3.0 ID - Drain Current - mA Pulsed 1 –25 ˚C TA = 25 ˚C 2 0.5 3.5 13 0 180 VDS = 3 V Pulsed 200 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 3 150 600 VGS - Drain to Source Voltage - V 5 120 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT TRANSFER CHARACTERISTICS 100 90 TA - Ambient Temperature - ˚C TC - Case Temperature - ˚C 300 60 VGS = 2.5 V Pulsed 24 20 16 12 TA = 150 ˚C 75 ˚C 8 25 ˚C –25 ˚C 4 0 0.5 1 3 10 30 60 ID - Drain Current - mA 3 2SK1824 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 50 VGS = 4 V Pulsed 30 20 10 TA = 150 ˚C 75 ˚C 25 ˚C f = 1 MHz VDS = 5 V 30 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-State Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Ciss Coss 10 3 Crss 1 –25 ˚C 0 0.5 1 3 10 30 0.5 100 200 0.5 ID - Drain Current - mA 1 tr 30 td(on) 10 30 100 ID - Drain Current - mA 4 30 10 3 1 0.3 10 0 200 VGS = 0 100 Pulsed ISD - Diode Forward Current td(on), tr, td(off), tf - Switching Time - ms tf 100 30 SOURCE TO DRAIN DIODE FORWARD VOLTAGE VDD = 5 V VGS = 5 V Rin = 10 Ω td(off) 10 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 300 3 300 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD - Source to Drain Voltage - V 1.1 2SK1824 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual C10535E Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E 5 2SK1824 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11