CM800HA-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Single IGBTMOD™ H-Series Module 800 Amperes/1200 Volts A B U - M4 THD (2 TYP.) R K P E M G B A S - M8 THD (2 TYP.) C E Q J C Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. G L H T - DIA. (4 TYP.) F N D E E C G E Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 5.12 130.0 L 0.79 20.0 B 4.33±0.01 110.0±0.25 M 0.77 19.5 C 1.840 46.75 N 0.75 19.0 0.61 15.6 D 1.73±0.04/0.02 44.0±1.0/0.5 P E 1.46±0.04/0.02 37.0±1.0/0.5 Q 0.51 13.0 F 1.42 36.0 R 0.35 9.0 G 1.25 31.8 S M8 Metric M8 H 1.18 30.0 T 0.26 Dia. Dia. 6.5 J 1.10 28.0 U M4 Metric M4 K 1.08 27.5 Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery (135ns) Free-Wheel Diode □ High Frequency Operation (20-25kHz) □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM800HA-24H is a 1200V (VCES), 800 Ampere Single IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 800 24 197 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM800HA-24H Single IGBTMOD™ H-Series Module 800 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM800HA-24H Units Junction Temperature Tj –40 to +150 °C Storage Temperature Tstg –40 to +125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage VGES ±20 Volts IC 800 Amperes ICM 1600* Amperes Collector Current Peak Collector Current Diode Forward Current IF 800 Amperes Diode Forward Surge Current IFM 1600* Amperes Power Dissipation Pd 4800 Watts – 95 in-lb Max. Mounting Torque M8 Terminal Screws Max. Mounting Torque M6 Mounting Screws – 26 in-lb Max. Mounting Torque M4 G-E Terminal Screws – 13 in-lb – 1600 Grams VRMS 2500 Volts Module Weight (Typical) V Isolation * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V – – 5.0 mA IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 80mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 800A, VGE = 15V – 2.7 3.6 Volts IC = 800A, VGE = 15V, Tj = 150°C – 2.4 – Volts Total Gate Charge QG VCC = 600V, IC = 800A, VGS = 15V – 4500 – nC Diode Forward Voltage VFM IE = 800A, VGS = 0V – – 3.5 Volts Min. Typ. Max. Units – – 180 nF – – 64 nF Gate Leakage Current * Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Test Conditions VGE = 0V, VCE = 10V, f = 1MHz Reverse Transfer Capacitance Cres – – 36 nF Resistive td(on) – – 500 ns Turn-on Delay Time Load Rise Time Switching Turn-off Delay Time Times Fall Time tr VCC = 600V, IC = 800A, – – 1200 ns td(off) VGE1 = VGE2 = 15V, RG = 4.2Ω – – 1000 ns – – 350 ns Diode Reverse Recovery Time trr tf IE = 800A, diE/dt = –1600A/µs – – 250 ns Diode Reverse Recovery Charge Qrr IE = 800A, diE/dt = –1600A/µs – 5.9 – µC Test Conditions Min. Typ. Max. Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified 198 Characteristics Symbol Units Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.026 °C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.058 °C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.018 °C/W Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM800HA-24H Single IGBTMOD™ H-Series Module 800 Amperes/1200 Volts OUTPUT CHARACTERISTICS (TYPICAL) 1600 VGE = 20V 1200 11 800 10 400 9 7 VCE = 10V Tj = 25°C Tj = 125°C 1200 800 400 8 0 0 0 2 4 6 8 10 4 3 2 1 0 0 4 8 12 16 0 20 400 800 1200 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 104 IC = 1600A 6 IC = 800A 4 2 CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) Tj = 25°C 8 103 102 Cies 102 Coes 101 VGE = 0V f = 1MHz IC = 320A 101 8 12 16 0 20 0.8 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 3.2 REVERSE RECOVERY TIME, t rr, (ns) 103 td(off) t d(on) tf 102 tr 101 101 2.4 VCC = 600V VGE = ±15V RG = 4.2Ω Tj = 125°C 102 COLLECTOR CURRENT IC, (AMPERES) 4.0 103 102 100 102 Irr di/dt = -1600A/µsec Tj = 25°C 101 101 102 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE 103 t rr Cres COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 104 103 1.6 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 4 100 10-1 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 0 1600 103 Tj = 25°C 0 SWITCHING TIME, (ns) VGE = 15V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 12 15 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 1600 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 800A VCC = 400V 16 12 VCC = 600V 8 4 0 0 1 2 3 4 5 6 GATE CHARGE, QG, (µC) 199 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 10-2 10-1 100 101 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.026°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 200 101 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) CM800HA-24H Single IGBTMOD™ H-Series Module 800 Amperes/1200 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 10-2 10-1 100 101 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.058°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3