CM1200HA-24J Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Single IGBTMOD™ H-Series Module 1200 Amperes/1200 Volts A B U - M4 THD (2 TYP.) R K P E M G B A S - M8 THD (2 TYP.) C E Q J C Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. G L H T - DIA. (4 TYP.) F N D E E C G E Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 5.12 130.0 L 0.79 20.0 B 4.33±0.01 110.0±0.25 M 0.77 19.5 1.840 46.75 N 0.75 19.0 D 1.73±0.04/0.02 44.0±1.0/0.5 P 0.61 15.6 E 1.46±0.04/0.02 37.0±1.0/0.5 C Q 0.51 13.0 F 1.42 36.0 R 0.35 9.0 G 1.25 31.8 S M8 Metric M8 H 1.18 30.0 T 0.26 Dia. Dia. 6.5 J 1.10 28.0 U M4 Metric M4 K 1.08 27.5 Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM1200HA-24J is a 1200V (VCES), 1200 Ampere Single IGBTMOD™ Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 1200 24 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM1200HA-24J Single IGBTMOD™ H-Series Module 1200 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM1200HA-24J Units Junction Temperature Tj –40 to +150 °C Storage Temperature Tstg –40 to +125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 1200 Amperes ICM 2400* Amperes Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (Tc = 25°C) IE 1200 Amperes Peak Emitter Current** (Tj ≤ 150°C) IEM 2400* Amperes Maximum Collector Dissipation (Tc = 25°C) (Tj < 150°C) Pc 5800 Watts Max. Mounting Torque M8 Terminal Screws – 95 in-lb Max. Mounting Torque M6 Mounting Screws – 40 in-lb Mounting Torque G(E) Terminal M4 – 15 in-lb – 1600 Grams Viso 2500 Volts Module Weight (Typical) Isolation Voltage, Main Terminal to Base Plate, AC 1 Min. Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – Gate Leakage Current IGES VGE = VCES, VCE = 0V – – 6 mA – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 120mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 1200A, VGE = 15V, Tj = 25°C – 2.4 3.1 Volts IC = 1200A, VGE = 15V, Tj = 125°C – 2.5 – Volts Total Gate Charge QG VCC = 600V, IC = 1200A, VGE = 15V – 5000 – nC Emitter Current Voltage** VEC IE = 1200A, VGE = 0V – – 3.7 Volts Min. Typ. Max. Units Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive td(on) Turn-on Delay Time Load Rise Time Switching Turn-off Delay Time Time Fall Time Test Conditions – – 200 nF VGE = 0V, VCE = 10V – – 70 nF – – 40 nF VCC = 600V, IC = 1200A, – – 600 ns tr VGE1 = VGE2 = 15V, – – 1800 ns td(off) RG = 3.3Ω, Resistive – – 1200 ns tf Load Switching Operation – – 1500 ns Diode Reverse Recovery Time** trr IE = 1200A, diE/dt = –2400A/µs – – 300 ns Diode Reverse Recovery Charge** Qrr IE = 1200A, diE/dt = –2400A/µs – 9.0 – µC Test Conditions Min. Typ. Max. Units Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Thermal Resistance, Junction to Case** Rth(j-c)Q Per IGBT – – 0.022 °C/W Thermal Resistance, Junction to Case** Rth(j-c)R Per FWDi – – 0.050 °C/W Rth(c-f) Per Module, Thermal Grease Applied – – 0.018 °C/W Contact Thermal Resistance * Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM1200HA-24J Single IGBTMOD™ H-Series Module 1200 Amperes/1200 Volts OUTPUT CHARACTERISTICS (TYPICAL) VGE = 20V 12 VCE = 10V Tj = 25°C Tj = 125°C 2000 Tj = 25°C 11 1600 IC, (AMPERES) IC, (AMPERES) 2000 5 2400 15 1200 10 800 1600 1200 800 9 400 VGE = 15V Tj = 25°C Tj = 125°C 4 VCE(sat), (VOLTS) 2400 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 3 2 1 400 8 0 0 2 4 6 8 0 0 10 0 4 8 VCE, (VOLTS) 16 0 20 500 1000 103 Tj = 25°C Tj = 25°C 8 IC = 1200A 4 Cies, Coes, Cres, (nF) 6 IE, (AMPERES) IC = 2400A 103 Cies 102 Coes 101 2 102 1.0 0 4 8 12 16 Cres VGE = 0V IC = 480A 0 2500 CAPACITANCE VS. VCE (TYPICAL) 104 10 2000 1500 IC, (AMPERES) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 12 VGE, (VOLTS) 20 1.5 2.0 2.5 3.0 100 10-1 3.5 100 101 GATE-EMITTER VOLTAGE, VGE, (VOLTS) VEC, (VOLTS) VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE, VGE (TYPICAL) 104 103 102 20 103 IC = 1200A 101 101 tr 102 102 VCC = 600V VGE = ±15V RG = 3.3 Ω Tj = 125°C 103 COLLECTOR CURRENT, IC, (AMPERES) 102 Irr 101 101 102 VCC = 600V 12 8 4 di/dt = -2400A/µsec Tj = 25°C 104 VGE, (VOLTS) td(on) t rr Irr, (AMPERES) tf 102 VCC = 400V td(off) t rr, (ns) SWITCHING TIME, (ns) 16 103 103 IE, (AMPERES) 101 104 0 0 2000 4000 6000 8000 QG, (nC) 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 4 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.022°C/W 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) CM1200HA-24J Single IGBTMOD™ H-Series Module 1200 Amperes/1200 Volts 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.05°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3