SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BF620 ISSUE 5 – MARCH 2001 ✪ FEATURES * High breakdown and low saturation voltages APPLICATIONS * Suitable for video output stages in TV sets * Switching power supplies COMPLEMENTARY TYPE: BF621 C E C PARTMARKING DETAIL – DC B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage V CBO 300 V V CEO 300 Emitter-Base Voltage V V EBO 5 V Peak Pulse Current I CM 100 mA Continuous Collector Current IC 50 mA Power Dissipation at T amb =25°C P tot Operating and Storage Temperature Range T j :T stg 1 W -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V (BR)CBO 300 MAX. V I C=10 µ A, I E=0 Collector-Emitter Breakdown Voltage V (BR)CEO 300 V I C=1mA, I B=0* Emitter-Base Breakdown Voltage V (BR)EBO 5 V I E=100 µ A, I C=0 Collector Cut-Off Current I CBO 10 20 nA µA V CB=200V, I E=0 V CB=200V, I E=0 † Colector Cut-Off Current I CER 50 10 nA µA V CE=200V, R BE=2.7K Ω V CE=200V, R BE=2.7K Ω † Emitter Cut-Off Current I EBO 10 µA V EB=5V, I C=0 Collector-Emitter Saturation Voltage V CE(sat) 0.6 V I C=30mA, I B=5mA* Base-Emitter Saturation Voltage V BE(sat) 0.9 V I C=20mA, I B=2mA* Static Forward Current Transfer Ratio h FE Transition Frequency fT 100 Typical MHz I C=10mA, V CE=10V f=100MHz Output Capacitance C obo 0.8 Typical pF V CB=30V, f=1MHz 50 I C=25mA, V CE=20V* †Tamb=150°C *Measured under pulsed conditions. For typical characteristics graphs see FMMTA42 datasheet. TBA