BRS43 TRANSISTOR (NPN) SOT-89-3L FEATURES z Low Voltage z High Current z Complement to BSR33 1. BASE AAPLICATIONS z Thick and Thin-Film Circuits z Telephony and General Industrial Applications 3. EMITTER 2. COLLECTOR MARKING:AR4 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 90 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A PC Collector Power Dissipation 500 mW Thermal Resistance From Junction To Ambient 250 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA,IE=0 90 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 80 V Emitter-base breakdown voltage V(BR)EBO IE=100µA,IC=0 5 V Collector cut-off current ICBO VCB=60V,IE=0 100 nA Emitter cut-off current IEBO VEB=5V,IC=0 100 nA DC current gain hFE(1)* VCE=5V, IC=0.1mA 30 hFE(2)* VCE=5V, IC=100mA 100 hFE(3)* VCE=5V, IC=500mA 50 Collector-emitter saturation voltage VCE(sat)* Base-emitter saturation voltage VBE(sat)* Transition frequency fT 300 IC=150mA,IB=15mA 0.25 V IC=500mA,IB=50mA 0.5 V IC=150mA,IB=15mA 1 V IC=500mA,IB=50mA 1.2 V VCE=10V,IC=50mA, f=100MHz 100 MHz Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 12 pF Emitter input capacitance Cib VBE=0.5V, IC=0, f=1MHz 90 pF *Pulse test １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５