Inchange Semiconductor Product Specification 2SD1208 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Wide area of safe operation ・High DC current gain ・Darlington APPLICATIONS ・Power regulator for line operated TV PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60±15 V VCEO Collector-emitter voltage Open base 60±15 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 5 A ICP Collector current (Pulse) 20 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1208 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO Collector-emitter breakdown voltage IC=100mA ;IB=0 VCBO Collector-base breakdown voltage IC=100mA ;IE=0 VCEsat-1 Collector-emitter saturation voltage VCEsat-2 MAX UNIT 45 75 V 45 75 V IC=0.5A ;IB=1mA 1.5 V Collector-emitter saturation voltage IC=1A; IB=1mA 2.5 V VBE Base-emitter on voltage IC=0.5A;VCE=5V 1.8 V IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=0.5A ; VCE=5V 2 MIN 2000 TYP. 20000 Inchange Semiconductor Product Specification 2SD1208 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimentions 3