ISC 2SC1450

Inchange Semiconductor
Product Specification
2SC1450
Silicon NPN Power Transistors
DESCRIPTION
·With TO-66 package
·Wide area of safe operation
·High collector-emitter breakdown voltage
:VCEO=150V(min)
·Complement to type 2SA766
APPLICATIONS
·For power amplifier and vertical output
applications.
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
150
V
VCEO
Collector-emitter voltage
Open base
150
V
VEBO
Emitter-base voltage
Open collector
5
V
0.4
A
20
W
IC
Collector current
PD
Total power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~200
℃
TC=80℃
Inchange Semiconductor
Product Specification
2SC1450
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=30mA; IB=0
150
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA; IE=0
150
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
5
V
Collector-emitter saturation voltage
IC=0.5A; IB=50m A
1.5
V
ICBO
Collector cut-off current
VCB=150V;IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE
DC current gain
IC=0.1A ; VCE=5V
VCEsat
CONDITIONS
2
MIN
30
TYP.
MAX
150
UNIT
Inchange Semiconductor
Product Specification
2SC1450
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3