isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE= 2000(Min)@ (VCE= 2V, IC= 3.5A) ·Large Current Capability and Wide ASO. ·Complement to Type 2SB1224 APPLICATIONS ·Designed for use in control of motor drivers, printer hammer drivers, relay drivers,and constant-voltage regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A Collector Power Dissipation @Ta=25℃ 2 PC W Collector Power Dissipation @TC=25℃ 25 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn 2SD1826 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1826 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ 60 V V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 70 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 7mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3.5A; IB= 7mA 2.0 V ICBO Collector Cutoff Current VCB= 40V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA hFE DC Current Gain IC= 3.5A; VCE= 2V Current-Gain—Bandwidth Product IC= 3.5A; VCE= 5V fT CONDITIONS MIN TYP. MAX UNIT 2000 20 MHz 0.6 μs 3.0 μs 1.7 μs Switching Times ton Turn-on Time tstg Storage Time tf IC= 3A, IB1= -IB2= 6mA, VCC= 20V; RL= 6.7Ω Fall Time isc Website：www.iscsemi.cn 2