isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD277 DESCRIPTION ·Wide Area of Safe Operation ·Low Saturation Voltage·High Power Dissipation APPLICATIONS ·Designed for use in series regulators and shunt regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -7 A IB Base Current -3 A PC Collector Power Dissipation @ TC=25℃ 70 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient isc Website：www.iscsemi.cn MAX UNIT 1.78 ℃/W 70 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD277 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.1A ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1.75A; IB= -0.1A -0.5 V VBE(on) Base-Emitter On Voltage IC= -1.75A ; VCE= -2V -1.2 V VCB= -45V; IE= 0 -0.1 ICBO CONDITIONS MIN MAX -45 UNIT V Collector Cutoff Current mA VCB= -40V; IE= 0; TC= 150℃ -2.0 ICEO Collector Cutoff Current VCE= -30V; IB= 0 -1.0 mA IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -1.0 mA hFE DC Current Gain IC= -1.75A; VCE= -2V 30 Current-Gain—Bandwidth Product IC= -0.5A; VCE= -4V 10 fT isc Website：www.iscsemi.cn 2 150 MHz