ISC 2N5611

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistors
2N5611
DESCRIPTION
·DC Current Gain: hFE= [email protected]= -2.5A
·Wide Area of Safe Operation
·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -100V(Min)
·Complement to Type 2N5612
APPLICATIONS
·Designed for use in high frequency power amplifiers, audio
power amplifier and drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-5
A
PC
Collector Power [email protected]=25℃
25
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150
℃
MAX
UNIT
6.0
℃/W
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal Resistance,Junction to Case
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistors
2N5611
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= -50mA ; IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -2.5A; IB= -0.25A
-0.75
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -2.5A; IB= -0.25A
-1.45
V
ICEO
Collector Cutoff Current
VCE= -100V; IB= 0
-1.0
mA
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
-0.1
mA
IEBO
Emitter Cutoff Current
VEB= -6V; IC= 0
-0.1
mA
hFE
DC Current Gain
IC= -2.5A ; VCE= -5V
30
Current-Gain—Bandwidth Product
IC= -0.5A ; VCE= -10V
50
fT
isc Website:www.iscsemi.cn
CONDITIONS
MIN
-100
B
B
2
MAX
UNIT
V
90
MHz