isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD808 DESCRIPTION ·DC Current Gain : hFE =30@ IC= -2A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -60V(Min) ·Complement to Type BD807 APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A IB Base Current -6 A PC Collector Power Dissipation @ TC=25℃ 90 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.39 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD808 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -200mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A -1.1 V VBE(on) Base-Emitter On Voltage IC= -4A ; VCE= -2V -1.6 V ICBO Collector Cutoff Current VCB= -70V; IE= 0 -1.0 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -2.0 mA hFE-1 DC Current Gain IC= -2A ; VCE= -2V 30 hFE-2 DC Current Gain IC= -4A ; VCE= -2V 15 Current-Gain—Bandwidth Product IC= -1.0A ; VCE= -10V; ftest= 1.0MHz 1.5 fT isc Website：www.iscsemi.cn CONDITIONS MIN -60 B 2 MAX UNIT V MHz