isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 350V (Min.) ·High Switching Speed APPLICATIONS Designed for high voltage, high speed , power switching in Inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications as: ·Switching Regulators ·Inverters ·Solenoid and Relay Drivers ·Motor Controls ·Deflection Circuits ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO(SUS) Collector-Emitter Voltage 350 V VCEX(SUS) Collector-Emitter Voltage 400 V VCEV Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continunous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continunous 2.5 A IBM Base Current-Peak 5.0 A PC Collector Power Dissipation @TC=25℃ 150 W Tj Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.17 ℃/W isc Website：www.iscsemi.cn MJ10002 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJ10002 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.25A; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.25A IC= 5A; IB= 0.25A, TC= 100℃ 1.9 2.0 V Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 2.9 V Base-Emitter Saturation Voltage IC= 5A; IB= 0.25A IC= 5A; IB= 0.25A, TC= 100℃ 2.5 2.5 V 350 VBE(sat) UNIT V B B V CE(sat)-2 MAX B B ICEV Collector Cutoff Current VCE=450V;VBE(off)=1.5V VCE=450V;VBE(off)=1.5V;TC=150℃ 0.25 5.0 mA ICER Collector Cutoff Current VCE= 450V; RBE= 50Ω; TC= 100℃ 5.0 mA IEBO Emitter Cutoff Current VEB= 8V; IC= 0 175 mA hFE-1 DC Current Gain IC= 2.5A, VCE= 5V 40 hFE-2 DC Current Gain IC= 5A, VCE= 5V 30 VECF C-E Diode Forward Voltage IF= 5A 5.0 V COB Output Capacitance IE= 0, VCB= 50V; ftest= 0.1MHz 275 pF 0.05 0.2 μs 0.25 0.6 μs 1.2 3.0 μs 0.6 1.5 μs 60 Switching Times; Resistive Load td Delay Time tr Rise Time ts Storage Time tf Fall Time isc Website：www.iscsemi.cn VCC= 250V; IC= 5A; IB1= 0.25A VBE(off)= 5V tp= 50μs, Duty Cycle≤2%