isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ15011 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain: hFE= 20(Min.)@IC = 2A ·Collector-Emitter Saturation Voltage: VCE(sat)= 2.5V(Max)@ IC = 4A ·Complement to Type MJ15012 APPLICATIONS ·Designed for high power audio, disk head positioners , and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO(SUS) Collector-Emitter Voltage 250 V VCEX Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current-Continuous 2 A IBM Base Current-Peak 5 A IE Emitter Current-Continuous -12 A IEM Emitter Current-Peak -20 A PD Total Power Dissipation@TC=25℃ 200 W Tj Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ B THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.875 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJ15011 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 0.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A 2.5 V VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 2V 2.0 V ICEO Collector Cutoff Current VCE= 200V; IB= 0 1.0 mA ICEX Collector Cutoff Current VCE= 250V;VBE(off)= 1.5V 0.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.5 mA hFE-1 DC Current Gain IC= 2A ; VCE= 2V 20 hFE-2 DC Current Gain IC= 4A ; VCE= 2V 5 COB Output Capacitance IE= 0 ; VCB= 10V; ftest= 1.0MHz isc Website：www.iscsemi.cn CONDITIONS B MIN MAX 250 B B UNIT V 100 750 pF