isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors MJE13070/13071 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min)- MJE13070 = 450V(Min)- MJE13071 · Collector-Emitter Saturation Voltage: VCE(sat) = 3.0V(Min)@IC= 5A APPLICATIONS ·Designed for high-voltage, high-speed, power switching in inductive circuits, where fall time is critical.They are particularly suited for line-operated switchmode applications such as switching regulators , inverters , DC-DC converter, motor controls, solenoid drive and deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCEV VCEO VEBO PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage VALUE MJE13070 650 MJE13071 750 MJE13070 400 MJE13071 450 UNIT V V Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current 2 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.56 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors MJE13070/13071 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MJE13070 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1A ;IB= 0 VBE(sat) UNIT V B 450 IC= 3A; IB= 0.6A IC= 3A; IB= 0.6A;TC=100℃ 1.0 2.0 V Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 3.0 V Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A IC= 3A; IB= 0.6A;TC=100℃ 1.5 1.5 V Collector-Emitter Saturation Voltage B B VCE(sat)-2 MAX 400 MJE13071 VCE(sat)-1 MIN B B B ICEV Collector Cutoff Current VCEV=Rated Value;VBE(off)= 1.5V VCEV=Rated Value;VBE(off)=1.5V;TC=100℃ 0.5 2.5 mA IEBO Emitter Cutoff Current VEB= 6V; IC=0 1.0 mA hFE DC Current Gain IC= 3A ; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V, ftest= 1.0kHz 250 pF 0.05 μs 0.4 μs 1.5 μs 0.5 μs 8 Switching Times td Delay Time tr Rise Time tstg tf Storage Time IC= 3A; IB1= 0.4A;VBE(off)= 5V; VCC= 250V; tp= 30μs,Duty Cycle≤1% Fall Time isc Website：www.iscsemi.cn 2