Power Transistors www.jmnic.com 2SA634 Silicon PNP Transistors BCE Features ï¹’With TO-220 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 40 V VCEO Collector to emitter voltage 40 V VEBO Emitter to base voltage 5.0 V IB Base collector current IC Collector current 3.0 A PC Collector power dissipation 10 W Tj Junction temperature 150 Tstg Storage temperature -55~+150 A TO-220 Electrical Characteristics Tc=25 SYMBOL ICBO IEBO PARAMETER Collector-base cut-off current Emitter-base cut-off current CONDITIONS VCB=40V; IE=0 VEB=5.0V; IC=0 VCE=40V; IB=0 MIN ICEO Collector-emitter cut-off current VCBO Collector-base breakdown voltage VCEO(SUS) Collector-emitter sustaining voltage IC=1mA; IB=0 40 Emitter-base breakdown voltage IE=1mA; Ic=0 5 VCE(sat-1) Collector-emitter saturation voltages IC=3A; IB=0.3A VCE(sat-2) Collector-emitter saturation voltages VEBO hFE-1 Forward current transfer ratio hFE-2 Forward current transfer ratio hFE-3 Forward current transfer ratio VBE(sat)1 Base-emitter stauration voltages VBE(sat)1 Base-emitter stauration voltages fT Transition frepuency Cob Output Capacitance IC=1A; VCE=5V IC=3A; IB=0.3A TYPE MAX 200 200 UNIT uA uA 0.5 mA V 1.0 V 1.5 V 40