www.jmnic.com Power Transistors 2N6543 Silicon NPN Transistors Features Intended for high voltage,fast switching applications With TO-3 package Absolute Maximum Ratings Tc=25 SYMBOL RATING UNIT VCBO Collector to base voltage PARAMETER 850 V VCEO Collector to emitter voltage 400 V VEBO Emitter to base voltage 9.0 V ICP Peak collector current 16 A IC Collector current 5.0 A PC Collector power dissipation 100 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TO-3 Electrical Characteristics Tc=25 SYMBOL PARAMETER CONDITIONS ICBO Collector-base cut-off current IEBO Emitter-base cut-off current ICEO Collector-emitter cut-off current VCBO Collector-base breakdown voltage V(BR)CEO VEBO Collector-emitter breakdown voltage MAX UNIT VCB=850V,VBE=0 0.5 mA VEB =9V; IC=0 1.0 mA IC=100mA,IB=0 MIN 400 V Emitter-base breakdown voltage VCEsat-1 Collector-emitter saturation voltages IC =5A; IB =1A 1.5 V VCEsat-2 Collector-emitter saturation voltages IC =8A; IB =2A 5.0 V VCEsat-3 Collector-emitter saturation voltages VCEsat-4 Collector-emitter saturation voltages hFE-1 Forward current transfer ratio IC=2.5A,VCE=3V 12 60 hFE-2 Forward current transfer ratio IC=5A,VCE=3V 7.0 35 hFE-3 Forward current transfer ratio hFE-4 Forward current transfer ratio VBE(sat)1 Base-emitter saturation voltages VBE(sat)2 Base-emitter saturation voltages VBE(sat)3 Base-emitter saturation voltages fT Transition frequency at f = 1MHz tf Fall time ts Tum-off storage time IC =5A; IB =1A IC=0.3A,VCE=10V JMnic 6.0 1.6 V 24 MHz