Product Specification www.jmnic.com 2SD1638 Silicon NPN Power Transistors ・ DESCRIPTION ・ ・With TO-126 package ・DARLINGTON APPLICATIONS ・For low frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 2 A PD Total power dissipation 10 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification www.jmnic.com 2SD1638 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO Collector-emitter breakdown voltage IC=25mA; IB=0 VCEsat Collector-emitter saturation voltage IC=1.0A ;IB=1mA 1.5 V VBEsat Base-emitter saturation voltage IC=1.0A ;IB=1mA 2.0 V ICEO Collector cut-off current VCE=100V; IB=0 0.5 mA ICBO Collector cut-off current VCB=100V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 3 mA hFE DC current gain IC=1A ; VCE=2V COB Collector output capacitance f=0.1MHz ; VCB=10V JMnic MIN TYP. MAX 100 UNIT V 1000 10000 25 pF Product Specification www.jmnic.com 2SD1638 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions JMnic