isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX21 DESCRIPTION ·Low Collector Saturation Voltage·High Switching Speed ·High Current Current Capability APPLICATIONS ·Desinged for use in switching and linear applications in military and industrial equipment. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEX Collector-Emitter Voltage VBE= -1.5V 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 40 A ICM Collector Current-Peak 50 A IB Base Current-Continuous 8 A PC Collector Power Dissipation @TC=25℃ 350 W Tj Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX21 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0 200 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 12A; IB= 1.2A 0.6 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A ;IB= 3A 1.5 V Base-Emitter Saturation Voltage IC= 25A ;IB= 3A 1.5 V ICEO Collector Cutoff Current VCE= 160V; IB= 0 3.0 mA ICEX Collector Cutoff Current VCE= 250V;VBE= -1.5V VCE= 250V;VBE= -1.5V;TC=125℃ 3.0 12.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 12A ; VCE= 2V 20 hFE-2 DC Current Gain IC= 25A ; VCE= 4V 10 Current-Gain—Bandwidth Product IC= 2A; VCE= 15V, ftest= 10MHz 8 VBE(sat) fT CONDITIONS MIN TYP. MAX UNIT 60 MHz Switching Times ton Turn-on Time ts Storage Time IC= 25A ;IB1= 3A; VCC= 100V 1.2 μs 1.8 μs 0.4 μs IC= 25A ;IB1= -IB2= 3A;VCC= 100V tf Fall Time isc Website：www.iscsemi.cn