ISC 2SD762A

Inchange Semiconductor
Product Specification
2SD762 2SD762A
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-220C package
·Wide area of safe operation
APPLICATIONS
·For audio freuqency power
amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SD762
VCBO
Collector-base voltage
60
Open base
2SD762A
VEBO
Emitter-base voltage
V
80
2SD762
Collector-emitter voltage
UNIT
60
Open emitter
2SD762A
VCEO
VALUE
V
80
Open collector
8
V
IC
Collector current
4
A
ICM
Collector current-peak
6
A
IB
Base current
1
A
PC
Collector power dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
B
TC=25℃
Inchange Semiconductor
Product Specification
2SD762 2SD762A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SD762
VCEO(SUS)
Collector-emitter
sustaining voltage
‹
TYP.
MAX
UNIT
60
IC=0.2A; L=25mH
V
80
2SD762A
VCEsat
MIN
Collector-emitter saturation voltage
IC=2 A;IB=0.4 A
1.0
V
VBE
Base-emitter on voltage
IC=1A ; VCE=3V
1.2
V
ICBO
Collector cut-off current
VCB=50V; IE=0
30
μA
IEBO
Emitter cut-off current
VEB=8V; IC=0
1
mA
hFE-1
DC current gain
IC=0.1A ; VCE=3V
40
hFE-2
DC current gain
IC=1A ; VCE=3V
30
B
hFE-2 classifications
Q
P
O
30-60
50-100
80-160
2
160
Inchange Semiconductor
Product Specification
2SD762 2SD762A
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3