isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 350V(Min) ·High Switching Speed APPLICATIONS ·Designed for applications such as electronic ignition, DC and AC motor controls, solenoid drivers,etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current 1 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 2.08 ℃/W BU910 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BU910 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 50mA 1.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.2A 1.8 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2.5A; IB= 50mA 2.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 4A; IB= 0.2A 2.5 V ICES Collector Cutoff Current VCE= 400V; VBE= 0 VCE= 400V; VBE= 0,TC= 125℃ 1 5 mA ICEO Collector Cutoff Current VCE= 350V; IB= 0 1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 5 mA VECF C-E Diode Forward Voltage IF= 4A 2.5 V isc Website：www.iscsemi.cn CONDITIONS B B 2 MIN TYP. MAX 350 UNIT V