JMNIC 2SA766

JMnic
Product Specification
2SA766
Silicon PNP Power Transistors
DESCRIPTION
・With TO-66 package
・High power dissipation
・Complement to type 2SC1450
APPLICATIONS
・Line-operated vertical deflection output
・Medium power amplifier
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-150
V
VCEO
Collector-emitter voltage
Open base
-150
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-0.4
A
ICM
Collector current-peak
-1.2
A
PC
Collector power dissipation
20
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
TC≤80℃
JMnic
Product Specification
2SA766
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=-0.2A ;L=25mH,RBE=5kΩ
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ;IC=0
VCEsat
Collector-emitter saturation voltage
IC=-1A; IB=-0.1A
-1.0
V
VBE-1
Base-emitter saturation voltage
IC=-0.1A ; VCE=-5V
-0.8
V
VBE-2
Base-emitter saturation voltage
IC=-0.5A ; VCE=-5V
-1.0
V
ICBO
Collector cut-off current
VCB=-60V; IE=0
-30
μA
hFE-1
DC current gain
IC=-0.1A ; VCE=-5V
35
hFE-2
DC current gain
IC=-0.5A ; VCE=-5V
35
Transition frequency
IE=0.1A ; VCB=-10V
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
-150
V
-5
V
150
15
MHz
JMnic
Product Specification
2SA766
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3